IQE008N03LM5SCATMA1 vs IQE008N03LM5CGSCATMA1 比較
詳細な並列比較: IQE008N03LM5SCATMA1 メーカー: Infineon および IQE008N03LM5CGSCATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IQE008N03LM5SCATMA1 | IQE008N03LM5CGSCATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.18 | $2.10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 |
| Technology | Trench MOSFET (N-Channel) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 252 A | — |
| On-Resistance (RDS(on)) max | 0.85 mΩ at VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | 2 V (typ) |
| Gate Drive Voltage | 10 V (recommended) | — |
| パッケージ | PG-WHSON-8 (Source-Down) | PG-WHTFN-9 (WHTFN) |
| Configuration | Single N-Channel | Dual N-Channel MOSFET Array |
| 実装タイプ | Surface Mount | Surface Mount (top + bottom cooling) |
| Cooling Architecture | Source-Down, dual-side cooling | — |
| 動作温度範囲 | -55 °C to +150 °C | -55C to +150C (junction) |
| MSLレベル | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) |
| RoHS ステータス | Compliant | Compliant |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) Max | — | 252 A (per channel, case-temperature limited) |
| On-Resistance (RDS(on)) Max | — | 0.85 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS maximum rating] |
| Polarity | — | N-Channel |
| ピン数 | — | 9 (WHTFN with exposed thermal pads) |
| ハロゲンフリー | — | Yes (Infineon standard for OptiMOS 5) |