IQE008N03LM5SCATMA1 vs IQE008N03LM5CGSCATMA1 对比
详细并排对比 IQE008N03LM5SCATMA1 出自 Infineon 和 IQE008N03LM5CGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQE008N03LM5SCATMA1 | IQE008N03LM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.18 | $2.10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 |
| Technology | Trench MOSFET (N-Channel) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 252 A | — |
| On-Resistance (RDS(on)) max | 0.85 mΩ at VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | 2 V (typ) |
| Gate Drive Voltage | 10 V (recommended) | — |
| 封装 | PG-WHSON-8 (Source-Down) | PG-WHTFN-9 (WHTFN) |
| Configuration | Single N-Channel | Dual N-Channel MOSFET Array |
| 安装类型 | Surface Mount | Surface Mount (top + bottom cooling) |
| Cooling Architecture | Source-Down, dual-side cooling | — |
| 工作温度范围 | -55 °C to +150 °C | -55C to +150C (junction) |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) |
| RoHS 状态 | Compliant | Compliant |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) Max | — | 252 A (per channel, case-temperature limited) |
| On-Resistance (RDS(on)) Max | — | 0.85 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS maximum rating] |
| Polarity | — | N-Channel |
| 引脚数 | — | 9 (WHTFN with exposed thermal pads) |
| 无卤 | — | Yes (Infineon standard for OptiMOS 5) |