IQEH46NE2LM7UCGSCATMA1 vs IQEH54NE2LM7UCGATMA1 比較
詳細な並列比較: IQEH46NE2LM7UCGSCATMA1 メーカー: Infineon および IQEH54NE2LM7UCGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ 生産中仕様比較
| パラメータ | IQEH46NE2LM7UCGSCATMA1 | IQEH54NE2LM7UCGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.65 | $1.95 |
| トランジスタタイプ | N-Channel MOSFET | — |
| Technology | OptiMOS 7 (trench) | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TC | 440 A | — |
| Continuous Drain Current (ID) at TA | 57 A | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 150 W | — |
| Maximum On-Resistance (RDS(on)) | 0.46 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | [DATA_NEEDED: VGS(th) typical/min/max] |
| パッケージ | PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) | PG-TTFN-9-3 |
| 実装タイプ | Surface Mount | Surface Mount |
| Polarity / Channel Type | Single N-Channel | — |
| Operating Mode | Enhancement-mode | — |
| Topology Suitability | Hard- and soft-switching | — |
| RoHS ステータス | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 52 A |
| Continuous Drain Current (ID) at Tc | — | 406 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 150 W |
| On-Resistance (RDS(on)) at 10V VGS | — | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical in nC] |
| 動作温度範囲 | — | -55C to +150C (typical MOSFET range) |
| MSLレベル | — | [DATA_NEEDED: MSL rating] |