IQEH46NE2LM7UCGSCATMA1 vs IQEH54NE2LM7UCGATMA1 Comparison

Detailed side-by-side comparison of IQEH46NE2LM7UCGSCATMA1 by Infineon and IQEH54NE2LM7UCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQEH46NE2LM7UCGSCATMA1

IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 βœ“ Active
Infineon
IQEH54NE2LM7UCGATMA1

IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon

IQEH54NE2LM7UCGATMA1 βœ“ Active

Specification Comparison

Parameter IQEH46NE2LM7UCGSCATMA1 IQEH54NE2LM7UCGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.65 $1.95
Transistor Type N-Channel MOSFET β€”
Technology OptiMOS 7 (trench) β€”
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at TC 440 A β€”
Continuous Drain Current (ID) at TA 57 A β€”
Power Dissipation at TA 2.5 W β€”
Power Dissipation at TC 150 W β€”
Maximum On-Resistance (RDS(on)) 0.46 mOhm β€”
Gate Threshold Voltage (VGS(th)) 2 V [DATA_NEEDED: VGS(th) typical/min/max]
Package PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) PG-TTFN-9-3
Mounting Type Surface Mount Surface Mount
Polarity / Channel Type Single N-Channel β€”
Operating Mode Enhancement-mode β€”
Topology Suitability Hard- and soft-switching β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 7 Power-Transistor
Channel Type β€” N-Channel
Continuous Drain Current (ID) at Ta β€” 52 A
Continuous Drain Current (ID) at Tc β€” 406 A
Power Dissipation at Ta β€” 2.5 W
Power Dissipation at Tc β€” 150 W
On-Resistance (RDS(on)) at 10V VGS β€” [DATA_NEEDED: RDS(on) max in mohm at VGS=10V]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical in nC]
Operating Temperature Range β€” -55C to +150C (typical MOSFET range)
MSL Level β€” [DATA_NEEDED: MSL rating]

Datasheets & Resources

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