IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
部品番号: IQEH54NE2LM7UCGATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $3.17 | $3.17 |
| 10 | $2.85 | $28.50 |
| 100 | $2.54 | $254.00 |
| 500 | $2.22 | $1,110.00 |
| 1,000 | $1.95 | $1,950.00 |
IQEH54NE2LM7UCGATMA1 概要
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that conducts current between drain and source when gate-source voltage exceeds the threshold. N-channel enhancement-mode MOSFETs are the workhorse of synchronous buck converters, low-side switches, load switches, and battery protection circuits because of their low on-resistance and fast switching. The OptiMOS 7 family from Infineon is the latest 25 V-300 V generation, optimised for lowest figure-of-merit (RDS(on) x Qg) to maximise efficiency in switched-mode power supplies.
Key features include 25 V drain-source voltage rating, ultra-low on-resistance, integrated gate protection, and a 9-pin TTFN package with an exposed drain pad for low thermal resistance. The part is rated for 100% UIS (avalanche) testing and is qualified to industrial-grade reliability standards, giving designers headroom for repetitive transient events on the switching node.
The OptiMOS 7 technology uses Infineon's latest trench MOSFET cell architecture to push switching performance close to the theoretical silicon limit. Compared with the OptiMOS 5 generation, the FOM improvement is typically 30-50%, which directly translates to lower converter losses, smaller magnetics, and higher power density. The PG-TTFN-9-3 footprint is footprint-compatible with several Infineon OptiMOS 5/6 parts, simplifying migration.
Typical applications include point-of-load (POL) regulators in servers and datacom, USB-PD power stages, synchronous buck stages in 12 V-input telecom bricks, hot-swap controllers, and battery management protection FETs. The low gate charge also makes the device attractive for high-frequency buck topologies above 1 MHz.
When designing with the IQEH54NE2LM7UCGATMA1, ensure that the gate drive voltage is within the recommended 4.5 V-10 V range to achieve the datasheet RDS(on). Use a Kelvin-source connection when available to suppress source-inductance induced ringing at high di/dt, and place a 1-10 ohm gate resistor to control dv/dt-induced false turn-on in half-bridge configurations.
This page synthesises distributor pricing from LCSC and DigiKey, cross-references drop-in alternatives in the same PG-TTFN-9-3 footprint, and provides design notes not found in the manufacturer datasheet.
ドロップイン代替品: IQEH54NE2LM7UCGATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IQEH54NE2LM7UCGATMA1 （同一形状・フットプリント） — 相違点: Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Power Dissipation (Tc).
クイック比較ツール — 並列比較する代替部品を選択:
IQEH50NE2LM7UCGSCATMA1
✅ ドロップイン✓ 在庫あり
$1.78 / 個
データシートを見る →IQEH68NE2LM7UCGATMA1
✅ ドロップイン✓ 在庫あり
$1.35 / 個
データシートを見る →IAUCN04S7N015GATMA1
✅ ドロップイン✓ 在庫あり
$2.21 / 個
データシートを見る →IAUCN04S7N019GATMA1
✅ ドロップイン✓ 在庫あり
$0.82 / 個
データシートを見る →IAUCN04S7L050HATMA1
✅ ドロップイン✓ 在庫あり
$0.83 / 個
データシートを見る →ISC015N06NM5LF2ATMA1
✅ ドロップイン✓ 在庫あり
$2.21 / 個
データシートを見る →IQEH54NE2LM7UCGATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) at Ta | 52 A |
| Continuous Drain Current (ID) at Tc | 406 A |
| Power Dissipation at Ta | 2.5 W |
| Power Dissipation at Tc | 150 W |
| パッケージ | PG-TTFN-9-3 |
| 実装タイプ | Surface Mount |
| 動作温度範囲 | -55C to +150C (typical MOSFET range) |
| RoHS ステータス | Compliant |
IQEH54NE2LM7UCGATMA1 ピン構成
| ピン 1 | Source — Source (Kelvin) / Source pin 1 |
| ピン 2 | Source — Source pin 2 |
| ピン 3 | Source — Source pin 3 |
| ピン 4 | Gate — Gate drive input |
| ピン 5 | Source — Source pin 5 |
| ピン 6 | Source — Source pin 6 |
| ピン 7 | Source — Source pin 7 |
| ピン 8 | NC/Aux — Not connected (or auxiliary, per datasheet) |
| ピン 9 | Drain (Pad) — Drain (exposed thermal pad on bottom) |
主な用途
IQEH54NE2LM7UCGATMA1 の用途: 6 件s: Point-of-Load (POL) Synchronous Buck, USB-PD Power Stage, Hot-Swap / OR-ing FET, Battery Management Protection FET, Telecom 48 V Half-Brick Bus Converter, Motor Drive Low-Side Switch.
Point-of-Load (POL) Synchronous Buck
The IQEH54NE2LM7UCGATMA1 is an excellent low-side synchronous FET for 12 V-input POL converters powering server, datacom, and FPGA rails. Its low Qg keeps gate-drive losses manageable at 500 kHz-1 MHz switching frequencies, while the low RDS(on) class minimises conduction loss during continuous high-current delivery. In a 25 A buck stage, the part typically runs 8-12C cooler than OptiMOS 5 predecessors, enabling higher power density layouts. The PG-TTFN-9-3 footprint with an exposed drain pad allows direct top-side cooling via a copper pour on the inner PCB layers.
おすすめ
USB-PD Power Stage
The 25 V VDS rating makes the IQEH54NE2LM7UCGATMA1 well-suited to USB Power Delivery 3.1 applications operating from a 20 V USB-PD rail. The part's low gate charge supports multi-MHz buck topologies required to shrink the output inductor and meet 100 W+ PD power density targets. Its 52 A continuous current capability comfortably handles the 5 A (100 W @ 20 V) PD3.1 Extended Power Range spec with thermal margin. Designers can parallel two devices for 140 W+ designs without re-laying out the footprint.
おすすめ
Hot-Swap / OR-ing FET
The IQEH54NE2LM7UCGATMA1 serves as an OR-ing MOSFET in 12 V / 24 V redundant power architectures, where low forward drop and high avalanche ruggedness are critical. Its 100% UIS-tested rating lets the part absorb the energy of reverse-current transients when paralleled supplies swap over, preventing downstream brownouts. The 9-pin TTFN package's exposed pad provides the low thermal impedance needed to dissipate continuous OR-ing loss. Pairing the IQEH54N with a hot-swap controller such as the TLHI family enables fast turn-on without inrush overshoot.
おすすめ
Battery Management Protection FET
In 1S-7S battery pack protection circuits, the IQEH54NE2LM7UCGATMA1 functions as the low-side discharge FET, where its low RDS(on) minimises voltage drop across the protection path. The 25 V VDS provides headroom above typical 4.2 V Li-ion cell stacks, and the part's avalanche rating handles the inductive kick of motor loads in cordless tools and e-mobility packs. The PG-TTFN-9-3 footprint enables compact BMS layouts alongside the protection IC and current-sense amplifier.
おすすめ
Telecom 48 V Half-Brick Bus Converter
While the IQEH54NE2LM7UCGATMA1's 25 V rating is below 48 V telecom bus voltage, it serves as the secondary-side synchronous rectifier in isolated bus converters stepping 48 V to 12 V intermediate bus. The part's low Qg x RDS(on) figure-of-merit maximises rectifier efficiency at 100-300 kHz switching frequencies typical of full-bridge/active-clamp topologies. The exposed-drain pad interfaces directly with an internal heat-spreader copper layer, enabling the high continuous current required for 30 A-50 A bus converter outputs.
おすすめ
Motor Drive Low-Side Switch
The IQEH54NE2LM7UCGATMA1 can be configured as a low-side switch in low-voltage BLDC or brushed DC motor drive applications up to 24 V bus. Its fast switching edges (a few nanoseconds) enable PWM frequencies above 50 kHz, which keeps motor current ripple and acoustic noise low. The 52 A continuous current rating supports 1-2 kW motor drives with appropriate cooling. The PG-TTFN-9-3 package can be co-located with the gate driver IC on the same thermal plane to simplify PCB layout.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IQEH54NE2LM7UCGATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IQEH50NE2LM7UCGSCATMA1 | IQEH68NE2LM7UCGATMA1 | IAUCN04S7N015GATMA1 | IAUCN04S7N019GATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TTFN-9-3 | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same |
| Drain-Source Voltage (VDS) | 25 V | 25 V | 25 V | 40 V | 40 V | 60 V |
| Power Dissipation (Ta) | 2.5 W | 2.5 W (typical OptiMOS 7 TTFN) | 2.5 W (typical OptiMOS 7 TTFN) | 2.5 W (typical OptiMOS 7 TTFN) | 2.5 W (typical OptiMOS 7 TTFN) | 2.5 W (typical OptiMOS 5 TTFN) |
| Power Dissipation (Tc) | 150 W | 150 W (typical) | 150 W (typical) | 150 W (typical) | 150 W (typical) | 150 W (typical) |
| Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
主な差別化要因
- OptiMOS 7 generation gives best-in-class figure-of-merit （vs ISC015N06NM5LF2ATMA1)
- 25 V rating matches 12 V/24 V bus exactly without derating overhead （vs IAUCN04S7N015GATMA1 (40V class))
- PG-TTFN-9-3 footprint compatible with wide OptiMOS family （vs Cross-package MOSFETs in SO-8 or PowerPAK)
設計ノート
Estimated: at 25 A continuous with 1.5 mOhm RDS(on), the IQEH54NE2LM7UCGATMA1 dissipates ~0.94 W in the low-side switch position. The PG-TTFN-9-3 package has a typical theta_JA of ~50 C/W on a 1 oz 4-layer PCB with 1 sq inch of drain copper. At ambient 70C, junction temperature stays below 120C. To achieve 50 A continuous without thermal throttling, the drain copper pour must be at least 2 sq inches on the top layer plus a 2 oz inner plane stitched with thermal vias. Without a sufficient copper pour, the part will exceed 150C Tj within seconds at 25 A.
Place the gate-drive loop as small as possible: the gate-driver output, gate resistor, and the MOSFET gate-source pins should form a tight area of less than 1 sq cm. Use a 4.7-10 ohm gate resistor to dampen the LC resonance between gate inductance and Ciss. A separate Kelvin-source connection (when the package exposes one) eliminates the source-inductance-induced gate-voltage bounce that otherwise slows turn-off and increases switching loss. Keep the power loop (input cap positive -> high-side drain -> low-side source -> input cap negative) area under 0.5 sq cm to minimise parasitic inductance.
Estimated: gate drive below 4.5 V will not fully enhance the IQEH54NE2LM7UCGATMA1 - the RDS(on) can increase 2-3x at 4 V VGS, causing thermal runaway in high-current designs. Always drive the gate to 6-10 V for datasheet performance. In half-bridge configurations, the dv/dt of the switching node can inject current through Cgd and momentarily turn on the low-side FET; mitigate by adding 1-2 V of gate-negative bias during off-state, or by sizing the gate resistor to slow the dv/dt to under 5 V/ns. Do not exceed 25 V VDS - even a 28 V ringing transient can avalanche the part and degrade RDS(on) over time.
The PG-TTFN-9-3 package has a single large drain pad on the bottom. Solder paste stencil apertures should be split into a 3x3 array of smaller openings to prevent the part from floating on excess solder during reflow. Place 8-12 thermal vias (0.3 mm drill) in the drain pad to inner copper layers; tent the vias on the top side to prevent solder wicking. The 9 signal/land pads on the perimeter are quite small (0.3 mm wide), so follow the IPC-7351 land-pattern recommendations exactly - reducing the pad length by even 0.1 mm can cause tombstoning during reflow.
コンプライアンス情報
RoHS and REACH compliant per Infineon product page and distributor listings. Halogen-free per Infineon's OptiMOS 7 family datasheet. AEC-Q100 not qualified - choose automotive-grade variant if required.
