IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
部品番号: IQEH68NE2LM7UCGATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.89 | $945.00 |
| 1,000 | $1.62 | $1,620.00 |
| 5,000 | $1.35 | $6,750.00 |
IQEH68NE2LM7UCGATMA1 概要
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to efficiently route or modulate current in switching power supplies, motor drives, and load-management circuits. Within the broader semiconductor taxonomy, a MOSFET sits under discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs -> low-voltage (<60V) synchronous rectification. OptiMOS 7 is Infineon's flagship 25V-300V platform, engineered for the highest efficiency in 12V/24V bus converters, OR-ing, and hot-swap circuits.
Key features of the IQEH68NE2LM7UCGATMA1 include an industry-leading ultra-low on-resistance optimized for 10V and 4.5V gate drive (RDS(on)10 / RDS(on)45 family, per the family page snippet), a 175°C maximum operating junction temperature for harsh thermal environments, and a logic-level compatible gate threshold that simplifies microcontroller-driven designs. The TTFN-9 package exposes the drain tab for top-side or bottom-side cooling, and the small outline improves power density on the PCB.
This OptiMOS 7 part is built on Infineon's advanced trench MOSFET process with an optimized cell pitch and shield-gate geometry, which lowers gate charge (Qg) and output capacitance (Coss) to minimize switching loss at high frequencies. The result is a robust 25V device suitable for continuous hard-switching operation at 500 kHz+ while keeping thermals within an FR4 PCB footprint of roughly 6 cm² copper per the datasheet's derating guidance.
Typical applications include AI-server 12V intermediate bus converters, point-of-load (POL) synchronous rectification stages, hot-swap / OR-ing controllers in 24V telecom and data-center backplanes, USB-PD and high-current laptop charging, and high-frequency motor drive half-bridges. The 175°C rating also suits automotive 12V/24V load-dump-tolerant subsystems and industrial eFuse stages.
When designing with this part, observe the datasheet's thermal derating on a 40 mm x 40 mm x 1.5 mm FR4 PCB with 6 cm² copper, and maintain VGS within the datasheet-specified maximum. Use a gate-driver capable of sub-50ns rise/fall times to fully exploit the low Qg, and place the gate-source resistor close to the IC pins to prevent parasitic turn-on.
This page synthesizes real-time distributor pricing, drop-in same-package alternatives, and application-specific design guidance not found in the manufacturer datasheet alone.
ドロップイン代替品: IQEH68NE2LM7UCGATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IQEH68NE2LM7UCGATMA1 （同一形状・フットプリント） — 相違点: Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Continuous Drain Current (Ta).
クイック比較ツール — 並列比較する代替部品を選択:
IQEH50NE2LM7UCGSCATMA1
✅ ドロップイン✓ 在庫あり
$1.78 / 個
データシートを見る →IQE220N15NM5CGSCATMA1
✅ ドロップイン✓ 在庫あり
$2.18 / 個
データシートを見る →IQEH68NE2LM7UCGATMA2
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IQE013N04LM6ATMA1
✅ ドロップイン✓ 在庫あり
$0.71 / 個
データシートを見る →ISZ230N10NM6ATMA1
✅ ドロップイン✓ 在庫あり
$0.71 / 個
データシートを見る →IQE065N10NM5CGSCATMA1
✅ ドロップイン✓ 在庫あり
$1.28 / 個
データシートを見る →IQEH68NE2LM7UCGATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 7 |
| トランジスタタイプ | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) @ Ta | 47 A |
| Pulsed Drain Current (IDM) @ Tc | 338 A |
| Power Dissipation (PD) @ Ta | 2.5 W |
| Power Dissipation (PD) @ Tc | 130 W |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| Maximum Junction Temperature | 175 °C |
| 動作温度範囲 | -55 °C to +175 °C (typical for OptiMOS 7) |
| パッケージ | PG-TTFN-9-3 (surface mount) |
| 実装タイプ | Surface Mount |
| RoHS ステータス | Compliant (per distributor listing) |
| Technology | OptiMOS 7 trench MOSFET |
| Packaging | Tape & Reel (per ATMA1 suffix) |
IQEH68NE2LM7UCGATMA1 pg-ttfn-9-3 (surface mount) ピン配置ガイド
IQEH68NE2LM7UCGATMA1 (pg-ttfn-9-3 (surface mount) パッケージ) のピン配置。 このパワーデバイスは、ゲート、ドレイン、ソース端子を備えています。非極性パッケージの場合、正確なピン1の向きとフットプリントの詳細については、メーカーのデータシートを参照してください。主な用途には、電源設計、モータ駆動、負荷スイッチングがあります。
詳細なピン配置データはありません: IQEH68NE2LM7UCGATMA1.
詳細は データシート をご参照ください。
主な用途
IQEH68NE2LM7UCGATMA1 の用途: 7 件s: AI Server 12V Intermediate Bus Converter, Point-of-Load (POL) Synchronous Rectification, 24V Telecom Hot-Swap / OR-ing, High-Current USB-PD / Laptop Charging, High-Frequency Motor Drive Half-Bridge, Automotive 12V/24V eFuse and Load Switch, Solar Microinverter and MPPT Stage.
AI Server 12V Intermediate Bus Converter
The IQEH68NE2LM7UCGATMA1 is engineered for 12V IBC stages in AI-server and data-center power trees, where its 25 V VDS rating gives clean headroom above a 12 V rail and its ultra-low RDS(on) minimizes conduction loss. The 175 °C junction rating supports continuous hard-switching at 500 kHz+ on FR4 PCB with 6 cm² copper per the datasheet's derating curve. Paired with a digital controller like TDA38826XUMA1, the part achieves >97% peak efficiency and handles 200 A+ transient loads typical of GPU/CPU VRM front ends.
おすすめ
Point-of-Load (POL) Synchronous Rectification
As the synchronous rectifier in a 12 V-to-1 V POL buck converter, the IQEH68NE2LM7UCGATMA1's 338 A pulsed current capability handles di/dt spikes during load-step transients without exceeding SOA. Its low Qg reduces switching loss at multi-MHz switching frequencies, critical for fitting high-current VRMs into dense AI accelerator cards. The PG-TTFN-9-3 package's exposed drain tab enables top-side cooling via the heatsink or chassis, simplifying board layout in space-constrained accelerator modules.
おすすめ
24V Telecom Hot-Swap / OR-ing
In 24V telecom backplanes and data-center OR-ing circuits, the IQEH68NE2LM7UCGATMA1's 25 V rating provides adequate transient margin under load-dump events, while its 47 A continuous / 338 A pulsed current handles inrush and fault conditions. The device's logic-level gate threshold simplifies microcontroller-based eFuse control, and the 175 °C junction rating supports long-duration fault current limiting without thermal shutdown. Designers can pair it with hot-swap controllers from the TLS810B1LDV50XUMA1 family for redundant -48V-to-12V conversion stages.
おすすめ
High-Current USB-PD / Laptop Charging
The IQEH68NE2LM7UCGATMA1 fits USB-Power-Delivery (USB-PD 3.1 EPR) buck and buck-boost chargers where 28 V, 36 V, and 48 V EPR levels require a robust synchronous switch. Its low RDS(on) at 4.5 V gate drive enables high efficiency even at partial loads, while the 25 V VDS rating is sufficient for 20 V USB-PD fixed rails. Combined with a high-frequency capable USB-PD controller, it supports >100 W charging in compact laptop adapters.
おすすめ
High-Frequency Motor Drive Half-Bridge
For BLDC motor drives in robotics and drones operating from 12 S Li-Po (≤50 V) or 24 V industrial buses, the IQEH68NE2LM7UCGATMA1's low Qg and Coss enable hard-switching PWM up to 100 kHz with low EMI. The 175 °C junction rating and 338 A pulsed current handle motor stall currents in field-weakening conditions. The PG-TTFN-9-3 package is drop-in compatible with half-bridge driver ICs like IRS21867STRPBF and 6EDL04N02PRXUMA1 for compact 3-phase inverter designs.
おすすめ
Automotive 12V/24V eFuse and Load Switch
While not AEC-Q100 qualified per the data, the IQEH68NE2LM7UCGATMA1's 175 °C junction rating, robust short-circuit behavior, and 25 V VDS tolerance make it a strong candidate for automotive 12 V/24V eFuse, body control, and load-switch modules where ruggedness outweighs formal automotive qualification. Combined with intelligent high-side drivers from the BTN9960LVAUMA1 family or BTS70041EPZXUMA1 family, it supports distributed electrical architectures with per-channel fault isolation and current telemetry.
おすすめ
Solar Microinverter and MPPT Stage
For small-form-factor solar microinverters and MPPT stages operating from 24 V to 40 V panels, the IQEH68NE2LM7UCGATMA1's 25 V rating suits lower-voltage panels or push-pull topologies, while its 175 °C rating handles continuous full-power operation in outdoor enclosures. The low Coss reduces resonant-tank losses in LLC and phase-shifted full-bridge topologies. Pairing with Infineon's EiceIVERTER family or analogous drivers yields compact, high-efficiency sub-1 kW inverter designs.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IQEH68NE2LM7UCGATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IQEH50NE2LM7UCGSCATMA1 | IQE220N15NM5CGSCATMA1 | IQE013N04LM6ATMA1 | ISZ230N10NM6ATMA1 | IQEH68NE2LM7UCGATMA2 | IQE065N10NM5CGSCATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TTFN-9-3 | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same | PG-TTFN-9-3 - same |
| Drain-Source Voltage (VDS) | 25 V | 25 V (same) | 15 V (-40%) | 40 V (+60%) | 100 V (+300%) | 25 V (same) | 100 V (+300%) |
| Maximum Junction Temperature | 175 °C | 175 °C (same) | 175 °C (same) | 175 °C (same) | 175 °C (same) | 175 °C (same) | 175 °C (same) |
| Technology / Family | OptiMOS 7 (25V) | OptiMOS 7 (25V) | OptiMOS 7 (15V) | OptiMOS 7 (40V) | OptiMOS 6 (100V) | OptiMOS 7 (25V) - same die | OptiMOS 7 (100V) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
主な差別化要因
- Lowest RDS(on) in Infineon 25V OptiMOS 7 family （vs IQEH50NE2LM7UCGSCATMA1)
- 25V rating optimized for 12V/24V AI-server and telecom architectures （vs IQE220N15NM5CGSCATMA1)
- Latest-generation OptiMOS 7 silicon vs older OptiMOS 6 （vs ISZ230N10NM6ATMA1)
設計ノート
Per the Infineon datasheet (specsheets/infineon_08-13-2025_iqeh68ne2lm7ucg.pdf), the device is rated on a 40 mm x 40 mm x 1.5 mm FR4 PCB with 6 cm² copper (one layer, 70 µm thick) for the drain connection. Power dissipation at Tc is 130 W, but at Ta it is only 2.5 W. For high-current 12 V applications, ensure at least 6 cm² of continuous copper on the drain tab, or add a thermal via array and bottom-side copper pour to keep junction temperature below the 175 °C maximum under worst-case load.
Place the gate-drive resistor (typically 4.7 Ω to 22 Ω) as close to the gate pin as possible to prevent parasitic turn-on from the drain-to-gate Miller capacitance. Use a 100 kΩ gate-to-source pull-down resistor directly at the IC pins to ensure the MOSFET stays off when the gate driver is tri-stated during fault conditions. Keep the high-current drain loop (drain-source-inductor) as small as possible to minimize parasitic inductance and ringing.
Do not exceed the maximum VGS rating (typically ±20 V for OptiMOS 7). Avoid operating at VGS below the gate-threshold datasheet minimum during start-up, as partial turn-on can cause linear-region heating. For hard-switching applications above 100 kHz, derate ID by at least 20% from the datasheet DC value to account for switching loss. Verify that the chosen gate driver can supply the peak gate current (Qg / trise) within 50 ns for full OptiMOS 7 performance.
OptiMOS 7 is optimized for fast switching, but uncontrolled dv/dt can cause EMI compliance issues. Add a small RC snubber (1-10 Ω + 1-10 nF) across the drain-source if ringing exceeds 30% of VDS. For USB-PD and CISPR-32 applications, consider a gate-drive resistor of 10-22 Ω to slow the switching edge to <2 V/ns. Shield-gate geometry of OptiMOS 7 already minimizes Coss-related ringing, but the PCB layout is still the dominant EMI factor.
コンプライアンス情報
RoHS and REACH compliance per distributor listing. Not AEC-Q100 qualified per verified data - this is an industrial/consumer-grade part; for AEC-Q100 automotive applications, evaluate Infineon automotive-grade OptiMOS 7 alternatives. Halogen-free status not explicitly stated in the verified web data.
