IQEH54NE2LM7UCGATMA1 vs IQDH29NE2LM5CGSCATMA1 比較
詳細な並列比較: IQEH54NE2LM7UCGATMA1 メーカー: Infineon および IQDH29NE2LM5CGSCATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ 生産中仕様比較
| パラメータ | IQEH54NE2LM7UCGATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.95 | $1.84 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at Ta | 52 A | — |
| Continuous Drain Current (ID) at Tc | 406 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 150 W | — |
| パッケージ | PG-TTFN-9-3 | PG-WHTFN-9-U02 (WHTFN EP) |
| 実装タイプ | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance (RDS(on)) at 10V VGS | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical in nC] | — |
| 動作温度範囲 | -55C to +150C (typical MOSFET range) | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 5 Power-Transistor |
| Continuous Drain Current (Ta) | — | 75 A |
| Continuous Drain Current (Tc) | — | 789 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 278 W |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2 V (typ) |
| ピン数 | — | 9 |
| Cooling | — | Dual-side exposed pad (top + bottom) |