IRF1310NSTRLPBF vs IRFB4310PBF 比較
詳細な並列比較: IRF1310NSTRLPBF メーカー: Infineon および IRFB4310PBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF1310NSTRLPBF | IRFB4310PBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.84 | $1.95 |
| トランジスタタイプ | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | 7 mOhm |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: VGS maximum rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 73.3 nC | 170 nC |
| Power Dissipation (PD) at TC=25C | 160 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| 動作温度範囲 | -55C to +175C | -55C to +175C (junction) |
| パッケージ | D2PAK (TO-263AB) | TO-220AB (through-hole) |
| 実装タイプ | Surface Mount | Through Hole |
| Technology | IR MOSFET (HEXFET) | HEXFET (IR MOSFET) |
| Built-in Diode | Yes (intrinsic body diode) | — |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Configuration | Single with built-in diode | — |
| Continuous Drain Current (ID) at Tc=25C | — | 130 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Maximum Power Dissition (PD) at Tc=25C | — | 300 W |
| On-Resistance RDS(on) typical at VGS=10V | — | 5.6 mOhm |
| Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Avalanche Rated | — | Yes |
| RoHS ステータス | — | Compliant |
| Lead-Free | — | Yes (Pb-free PBF suffix) |