IRF1310NSTRLPBF vs IRFB4310PBF 비교
다음의 상세 나란히 비교: IRF1310NSTRLPBF 제조: Infineon 및 IRFB4310PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF1310NSTRLPBF | IRFB4310PBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.84 | $1.95 |
| 트랜지스터 유형 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | 7 mOhm |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | [DATA_NEEDED: VGS maximum rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 73.3 nC | 170 nC |
| Power Dissipation (PD) at TC=25C | 160 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| 동작 온도 범위 | -55C to +175C | -55C to +175C (junction) |
| 패키지 | D2PAK (TO-263AB) | TO-220AB (through-hole) |
| 실장 유형 | Surface Mount | Through Hole |
| Technology | IR MOSFET (HEXFET) | HEXFET (IR MOSFET) |
| Built-in Diode | Yes (intrinsic body diode) | — |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Configuration | Single with built-in diode | — |
| Continuous Drain Current (ID) at Tc=25C | — | 130 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Maximum Power Dissition (PD) at Tc=25C | — | 300 W |
| On-Resistance RDS(on) typical at VGS=10V | — | 5.6 mOhm |
| Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Avalanche Rated | — | Yes |
| RoHS 상태 | — | Compliant |
| Lead-Free | — | Yes (Pb-free PBF suffix) |