IRF4905STRRPBF vs IRF4905SPBF 比較
詳細な並列比較: IRF4905STRRPBF メーカー: Infineon および IRF4905SPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF4905STRRPBF | IRF4905SPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.94 | $1.18 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at TC=25C | -74 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max, typical +/-20V] |
| RDS(on) max at VGS=-10V | 20 mOhm | — |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | -2.0 V to -4.0 V |
| Total Gate Charge (Qg) | 120 nC | 120 nC (typical per Mouser listing) |
| Power Dissipation (PD) at TC=25C | 170 W | — |
| 動作接合温度 | -55 C to +175 C | -55 C to +150 C |
| パッケージ | D2PAK (TO-263-3) | D2PAK (TO-263) surface mount |
| 実装タイプ | Surface Mount | Surface Mount |
| Technology | HEXFET (Advanced Process) | HEXFET, planar cell |
| RoHS ステータス | Compliant | Compliant (PBF suffix indicates Pb-free) |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID, Tc=25C) | — | -42 A |
| On-Resistance (RDS(on) max) | — | 20 mOhm @ VGS = -10V |
| Power Dissipation (PD, Tc=25C) | — | 170 W |
| Thermal Resistance, Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC, typical 0.6 C/W] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Qualification | — | JEDEC standard |