IRF4905STRRPBF - 55V P-Channel HEXFET MOSFET | Infineon
部品番号: IRF4905STRRPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.94 | $940.00 |
IRF4905STRRPBF 概要
A P-channel MOSFET (PMOS) is a type of metal-oxide-semiconductor field-effect transistor in which the channel is formed by positive charge carriers (holes) flowing from source to drain when the gate is pulled below the source potential. In the broader power-device taxonomy, it sits alongside its N-channel counterpart under the power MOSFET family, within discrete semiconductors, and ultimately under power management ICs and modules. P-channel devices are valued for high-side load switching because a simple low-voltage control signal referenced to ground can drive the gate, eliminating the complexity of bootstrap or charge-pump drive circuitry required for N-channel high-side switches.
The IRF4905STRRPBF delivers three differentiating features: an industry-lowest 20 mOhm Rds(on) at -10 V VGS in its voltage class, a robust 170 W continuous power dissipation rating at Tc = 25 C, and an avalanche-rated repetitive ruggedness that protects the device during unclamped inductive switching events. The low on-resistance translates directly into lower conduction losses and cooler operation in DC-DC converters, while the 55 V drain-source rating provides 10 V of margin above the 12 V automotive transient envelope, supporting reliable operation in 24 V industrial bus systems.
Architecturally, the IRF4905STRRPBF uses a vertical DMOS cell structure with a stripe-layout HEXFET die. The P-channel polarity simplifies gate drive because pulling the gate to ground turns the device on, allowing direct logic-level control from a microcontroller GPIO without level-shifting hardware. The D2PAK package's exposed metal tab provides a low thermal-resistance path (approximately 1.0 C/W junction-to-case), enabling the 170 W power rating when mounted on adequate PCB copper or an external heatsink.
Typical applications include high-side load switches in automotive ECUs, motor driver H-bridges, battery protection circuits in 12 V Li-ion packs, DC-DC converter synchronous rectifiers, and power-ORing redundancy modules. In each case, the PMOS high-side topology and 20 mOhm Rds(on) make it well-suited to systems where low conduction loss, simple gate drive, and compact surface-mount assembly are required.
When designing with this MOSFET, ensure that the gate-source voltage stays within the +/-20 V absolute maximum rating and add a pull-up resistor on the gate to prevent accidental turn-on from drain-to-gate dv/dt coupling. The D2PAK tab is electrically tied to the drain, so PCB layout must maintain adequate clearance between the tab and any low-side copper pour.
This page synthesizes distributor stock data, drop-in D2PAK alternatives, and design notes not consolidated in the manufacturer datasheet, providing engineering context beyond raw spec reproduction.
ドロップイン代替品: IRF4905STRRPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRF4905STRRPBF （同一形状・フットプリント） — 相違点: Package, Technology, Operating Temperature Range, RoHS Status, Drain-Source Voltage (VDS).
クイック比較ツール — 並列比較する代替部品を選択:
IRF4905SPBF
✅ ドロップイン✓ 在庫あり
$1.18 / 個
データシートを見る →IRF4905STRLPBF
✅ ドロップイン✓ 在庫あり
$0.95 / 個
データシートを見る →AUIRF4905S
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRF5305STRRPBF
✅ ドロップイン✓ 在庫あり
$0.62 / 個
データシートを見る →IRFR5305TRPBF
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.32 / 個
データシートを見る →IRF4905STRRPBF 最大定格＆電気的特性
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -55 V |
| Continuous Drain Current (ID) at TC=25C | -74 A |
| Gate-Source Voltage (VGS) max | ±20 V |
| RDS(on) max at VGS=-10V | 20 mOhm |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V |
| Total Gate Charge (Qg) | 120 nC |
| Power Dissipation (PD) at TC=25C | 170 W |
| 動作接合温度 | -55 C to +175 C |
| パッケージ | D2PAK (TO-263-3) |
| 実装タイプ | Surface Mount |
| Technology | HEXFET (Advanced Process) |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
IRF4905STRRPBF ピン構成
| ピン 1 | Gate — Gate control input (driven low to turn on P-channel) |
| ピン 2 | Drain — Drain connection (also tied to metal tab) |
| ピン 3 | Source — Source connection |
| ピン TAB | Drain (Tab) — Exposed metal tab electrically connected to drain, also serves as thermal pad |
安全動作領域 (DC)
主な用途
IRF4905STRRPBF の用途: 6 件s: 12V Automotive High-Side Load Switch, Synchronous Rectifier in Buck Converters, Battery Protection and Power OR-ing, Motor Driver H-Bridge High-Side Switch, Industrial 24V Solenoid and Relay Driver, Hot-Swap and Inrush Current Limiter.
12V Automotive High-Side Load Switch
The IRF4905STRRPBF is a strong fit for 12 V automotive high-side load switches driving lamps, solenoids, and HVAC actuators. Its P-channel polarity eliminates the need for a bootstrap or charge-pump gate driver because pulling the gate low through a small-signal NPN transistor turns the device on directly from a 3.3 V or 5 V MCU GPIO. With a continuous drain current of -74 A and 20 mOhm Rds(on), the device handles inrush currents for incandescent lamp loads and motor starting transients while dissipating only I^2 * R conduction loss. The 55 V VDS rating provides margin against 24 V jump-start events and 12 V load-dump transients per ISO 7637-2, supporting robust automotive ECU design.
おすすめ
Synchronous Rectifier in Buck Converters
In synchronous buck DC-DC converters for 12 V or 24 V input rails, the IRF4905STRRPBF can serve as the high-side P-channel control switch or as a low-side synchronous rectifier when paired with an N-channel partner. Its 20 mOhm Rds(on) reduces conduction loss versus Schottky diode solutions, improving efficiency by 3-5% at moderate switching frequencies. The 120 nC total gate charge is well-matched to half-bridge gate driver ICs such as the IRS2008 family. With 170 W power dissipation capability and a D2PAK thermal pad, the device can deliver 5-10 A continuous output current in surface-mount step-down designs without external heatsinking.
おすすめ
Battery Protection and Power OR-ing
The IRF4905STRRPBF is well-suited to Li-ion battery pack protection circuits where it functions as a reverse-polarity and over-current disconnect switch. Its P-channel high-side topology places the MOSFET between the battery positive terminal and the load, so a fault condition detected by the protection MCU pulls the gate high to disconnect the load. The 20 mOhm Rds(on) minimizes voltage drop across the protection switch, preserving usable battery capacity. Combined with the 55 V VDS rating and avalanche ruggedness, the device can absorb the energy of a sudden load disconnection without damage. The D2PAK package also supports high-current 10-20 A continuous battery pack designs.
おすすめ
Motor Driver H-Bridge High-Side Switch
In brushed DC motor H-bridge drivers, the IRF4905STRRPBF serves as the high-side switch in each half-bridge leg. The P-channel device is driven directly by a low-side gate driver signal referenced to ground, simplifying the gate drive circuitry compared to N-channel high-side solutions that require bootstrap capacitors. With 74 A continuous current capability and avalanche ruggedness for inductive flyback events, the device can handle 1-2 HP motor loads. The 20 mOhm Rds(on) reduces conduction loss during PWM operation at 20 kHz, supporting efficient variable-speed motor control in industrial automation and robotics.
おすすめ
Industrial 24V Solenoid and Relay Driver
The IRF4905STRRPBF is commonly deployed in industrial 24 V solenoid and relay driver modules where its 55 V VDS rating comfortably exceeds the 24 V bus plus inductive transient overshoot. The P-channel topology allows direct MCU-driven control with a single NPN transistor level translator, eliminating opto-isolators in non-isolated designs. With 74 A peak current handling, the device can switch large solenoid valves and contactor coils, while the 20 mOhm Rds(on) keeps conduction losses low for continuously-energized coils. The D2PAK surface-mount package supports automated assembly in volume production of industrial control equipment.
おすすめ
Hot-Swap and Inrush Current Limiter
The IRF4905STRRPBF can function as the pass element in 12 V or 24 V hot-swap controllers, where it controls inrush current during board insertion into a live backplane. Its P-channel high-side position allows the gate to be slowly charged by an external RC network, providing a controlled Vds turn-on and limiting di/dt to safe levels for downstream bulk capacitors. With 74 A continuous current and 170 W power dissipation, the device handles sustained load currents typical of telecom and server hot-swap applications. The 55 V VDS rating is well-matched to nominal 12 V and 24 V bus voltages with appropriate transient headroom.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRF4905STRRPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRF4905SPBF | IRF4905STRLPBF | AUIRF4905S | IRF5305STRRPBF | IRFR5305TRPBF |
|---|---|---|---|---|---|---|
| Package | D2PAK (TO-263-3) | D2PAK (TO-263-3) - same | D2PAK (TO-263-3) - same | D2PAK (TO-263-3) - same | D2PAK (TO-263-3) - same | DPAK (TO-252-3) - smaller |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | -55 V | -55 V | -55 V | -55 V | -55 V |
| Continuous Drain Current (ID) | -74 A | -74 A | -74 A | -74 A | -31 A | -31 A |
| RDS(on) max at VGS=-10V | 20 mOhm | 20 mOhm | 20 mOhm | 20 mOhm | 60 mOhm | 110 mOhm |
| Total Gate Charge (Qg) | 120 nC | 120 nC | 120 nC | 120 nC | 63 nC | 42 nC |
| Power Dissipation (PD) at TC=25C | 170 W | 170 W | 170 W | 170 W | 110 W | 110 W |
| Automotive Qualification (AEC-Q101) | No | No | No | Yes | No | No |
主な差別化要因
- Highest current in its voltage class for D2PAK P-channel （vs IRF5305STRRPBF)
- Lowest on-resistance in its voltage class （vs IRF5305STRRPBF)
- Automotive-qualified variant available in same package （vs IRF4905STRRPBF vs AUIRF4905S)
- Industry-standard pinout enables drop-in upgrade （vs IRFR5305TRPBF (DPAK))
設計ノート
Estimated: at VGS = -10 V and ID = 30 A continuous, conduction loss is I^2 * R = 30 * 30 * 0.020 = 18 W. The D2PAK junction-to-ambient thermal resistance on a 1 sq-inch 2-oz copper pad is approximately 40 C/W, producing a junction temperature rise of 18 W * 40 C/W = 720 C above ambient - clearly exceeding the 175 C maximum. Therefore at 30 A continuous a substantial heatsink (target theta_SA < 0.5 C/W) or forced-air cooling is mandatory. At 10 A continuous the 2 W loss produces only an 80 C rise, which is manageable with adequate PCB copper alone.
The D2PAK exposed tab is electrically tied to the drain, so PCB layout must maintain at least 0.5 mm clearance between the tab and any low-side copper pour (source, signal ground, gate drive) to prevent short circuits under tab solder expansion. Place the gate-drive components (pull-up resistor, NPN level shifter) within 5 mm of the gate pin to minimize parasitic inductance that could cause gate-oscillation. A gate-source resistor of 10 kOhm to 100 kOhm is recommended to prevent dv/dt-induced turn-on from drain-to-gate coupling during fast switching transitions.
Do not exceed the +/-20 V VGS absolute maximum rating. A common failure mode is connecting the gate directly to the source (0 V) without a current-limiting resistor during turn-off, which produces large dV/dt and can punch through the gate oxide. Always include a gate resistor (10-100 Ohm) in series with the gate driver output. Additionally, when used as a high-side switch, ensure the source-to-ground path includes a low-impedance connection because the device's source is now elevated to load voltage - a poor source connection causes the gate drive signal to float and can lead to unintended turn-on or turn-off.
コンプライアンス情報
RoHS and REACH compliant per Infineon product page. Not AEC-Q100/101 qualified - choose AUIRF4905S variant for automotive. Halogen-free status not explicitly confirmed in source data.
