IRF7103TRPBF vs IRF7854TRPBF 比較
詳細な並列比較: IRF7103TRPBF メーカー: Infineon および IRF7854TRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF7103TRPBF | IRF7854TRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.47 | $0.48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7103TRPBF | — |
| FET Type | Dual N-Channel | N-Channel |
| Configuration | Common Source, Dual Die | — |
| Drain-to-Source Voltage (VDS) | 50 V | — |
| Continuous Drain Current (ID) | 3 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | — |
| On-Resistance RDS(on) max | 130 mOhm @ VGS=10V | — |
| On-Resistance RDS(on) typ | 0.11 ohm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Power Dissipation (PD) | 2 W | — |
| 動作温度範囲 | -55C to +150C (TJ) | -55°C to +150°C (TJ) |
| パッケージ | SO-8 (PG-DSO-8-902) | SO-8 |
| 実装タイプ | Surface Mount | Surface Mount |
| Technology | IR MOSFET™ (HEXFET equivalent) | HEXFET (planar N-channel) |
| Soldering Method | Vapour phase, infrared, wave soldering | — |
| MSLレベル | 1 | — |
| Lead-Free | Yes (Pb-free per TRPBF suffix) | — |
| RoHS ステータス | Compliant | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 10 A |
| Power Dissipation (PD) at Ta=25°C | — | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | — | 13.4 mΩ |
| Gate-Source Threshold Voltage VGS(th) max | — | 4.9 V |
| Total Gate Charge Qg | — | 27 nC |
| Lead-Free / RoHS | — | Yes (PBF suffix, lead-free) |
| Qualification | — | JEDEC industrial, Normal level |
| Solder Process | — | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | — | 10 V |