IRFB52N15DPBF vs IRFS52N15DPBF 比較
詳細な並列比較: IRFB52N15DPBF メーカー: Infineon および IRFS52N15DPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFB52N15DPBF | IRFS52N15DPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.65 | $2.15 |
| Drain-Source Voltage (V(BR)DSS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25C | 51 A | — |
| Pulsed Drain Current (IDM) | 204 A | [DATA_NEEDED: IDM] |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Static Drain-Source On-Resistance (RDS(on)) | 32 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 60 nC (typical) | 60 nC (typical) |
| Power Dissipation (PD) at TC=25C | 230 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| 動作接合温度 | -55 C to +175 C | -55C to +175C |
| Package Type | TO-220AB (through-hole) | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (vertical DMOS, hexagonal cell) | HEXFET (Planar Cell) |
| 実装タイプ | Through Hole | Surface Mount |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free Finish | Yes (Pb-free PBF suffix) | — |
| Qualification Standard | Industrial market (per IR/Infineon) | JEDEC |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) @ TC=25C | — | 51 A |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| RDS(on) max @ VGS=10V | — | 32 mOhm |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Power Dissipation (PD) @ TA=25C | — | 3.8 W |
| Power Dissipation (PD) @ TC=25C | — | 230 W |
| パッケージ | — | D2PAK (TO-263) Surface Mount |
| MSLレベル | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |