IRFB52N15DPBF vs IRFS52N15DPBF Сравнение
Подробное сравнение бок о бок IRFB52N15DPBF от Infineon и IRFS52N15DPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRFB52N15DPBF | IRFS52N15DPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,65 | $2,15 |
| Drain-Source Voltage (V(BR)DSS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25C | 51 A | — |
| Pulsed Drain Current (IDM) | 204 A | [DATA_NEEDED: IDM] |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Static Drain-Source On-Resistance (RDS(on)) | 32 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 60 nC (typical) | 60 nC (typical) |
| Power Dissipation (PD) at TC=25C | 230 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Рабочая температура перехода | -55 C to +175 C | -55C to +175C |
| Package Type | TO-220AB (through-hole) | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (vertical DMOS, hexagonal cell) | HEXFET (Planar Cell) |
| Тип монтажа | Through Hole | Surface Mount |
| Статус RoHS | Compliant | Compliant |
| Lead-Free Finish | Yes (Pb-free PBF suffix) | — |
| Qualification Standard | Industrial market (per IR/Infineon) | JEDEC |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) @ TC=25C | — | 51 A |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| RDS(on) max @ VGS=10V | — | 32 mOhm |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Power Dissipation (PD) @ TA=25C | — | 3.8 W |
| Power Dissipation (PD) @ TC=25C | — | 230 W |
| Корпус | — | D2PAK (TO-263) Surface Mount |
| Уровень MSL | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |