IRFB7534PBF vs FDP030N06 比較
詳細な並列比較: IRFB7534PBF メーカー: Infineon および FDP030N06 メーカー: onsemi。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFB7534PBF | FDP030N06 |
|---|---|---|
| ブランド | Infineon | onsemi |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.85 | $1.89 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFB7534PBF | — |
| Technology | StrongIRFET™ (planar N-channel) | PowerTrench (Trench) |
| トランジスタタイプ | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 195 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Power Dissipation (PD) at Tc=25C | 294 W | — |
| On-Resistance RDS(on) max at VGS=10V | 2.4 mOhm | — |
| Gate Threshold Voltage VGS(th) | 3.7 V (typ) | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy Rated | Yes | — |
| パッケージ | TO-220AB | TO-220-3 (3+Tab) |
| 実装タイプ | Through Hole | Through Hole |
| 動作温度範囲 | -55C to +175C | — |
| RoHS ステータス | Compliant (PbF suffix) | [DATA_NEEDED: RoHS compliance status] |
| MSLレベル | MSL1 (unlimited floor life) | — |
| FET Type | — | N-Channel MOSFET |
| Drain to Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) @ 25C | — | 120 A (Tc) |
| Continuous Drain Current (datasheet rating) | — | 193 A (Tc, datasheet title rating) |
| RDS(on) Max @ Id, Vgs | — | 3.2 mOhm |
| RDS(on) Typ | — | 2.6 mOhm |
| Power Dissipation (Tc) | — | 231 W (Tc) |
| Gate Drive Type | — | Standard level gate drive |
| Switching Speed | — | Fast |
| Gate Input Resistance | — | Low gate input resistance (low gate charge) |
| Avalanche Test | — | 100% avalanche tested |
| Packing | — | Tube |
| Typical Applications | — | Power supply, switching applications |