IRFB7534PBF vs FDP030N06 对比
详细并排对比 IRFB7534PBF 出自 Infineon 和 FDP030N06 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFB7534PBF | FDP030N06 |
|---|---|---|
| 品牌 | Infineon | onsemi |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.85 | $1.89 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFB7534PBF | — |
| Technology | StrongIRFET™ (planar N-channel) | PowerTrench (Trench) |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 195 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Power Dissipation (PD) at Tc=25C | 294 W | — |
| On-Resistance RDS(on) max at VGS=10V | 2.4 mOhm | — |
| Gate Threshold Voltage VGS(th) | 3.7 V (typ) | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy Rated | Yes | — |
| 封装 | TO-220AB | TO-220-3 (3+Tab) |
| 安装类型 | Through Hole | Through Hole |
| 工作温度范围 | -55C to +175C | — |
| RoHS 状态 | Compliant (PbF suffix) | [DATA_NEEDED: RoHS compliance status] |
| MSL 等级 | MSL1 (unlimited floor life) | — |
| FET Type | — | N-Channel MOSFET |
| Drain to Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) @ 25C | — | 120 A (Tc) |
| Continuous Drain Current (datasheet rating) | — | 193 A (Tc, datasheet title rating) |
| RDS(on) Max @ Id, Vgs | — | 3.2 mOhm |
| RDS(on) Typ | — | 2.6 mOhm |
| Power Dissipation (Tc) | — | 231 W (Tc) |
| Gate Drive Type | — | Standard level gate drive |
| Switching Speed | — | Fast |
| Gate Input Resistance | — | Low gate input resistance (low gate charge) |
| Avalanche Test | — | 100% avalanche tested |
| Packing | — | Tube |
| Typical Applications | — | Power supply, switching applications |