IRFB7545PBF vs IRF1310NSTRLPBF 比較
詳細な並列比較: IRFB7545PBF メーカー: Infineon および IRF1310NSTRLPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFB7545PBF | IRF1310NSTRLPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.95 | $0.84 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFB7545PBF | — |
| Technology | StrongIRFET™ (HEXFET, N-Channel) | IR MOSFET (HEXFET) |
| Polarity | N-Channel | — |
| VDS (Drain-Source Voltage) max | 60 V | — |
| VGS (Gate-Source Voltage) max | ±20 V | — |
| RDS(on) max at VGS=10V | 5.9 mOhm | — |
| Continuous Drain Current (ID) at Tc=25C | 95 A | — |
| Pulsed Drain Current (IDM) | 380 A | [DATA_NEEDED: pulsed drain current] |
| Single-Pulse Avalanche Current (IAS) | 57 A | — |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| 動作接合温度 | -55C to +175C | — |
| パッケージ | TO-220AB (Through-Hole) | D2PAK (TO-263AB) |
| 実装タイプ | Through Hole (THT) | Surface Mount |
| Lead-Free / RoHS | Yes (Lead-Free, PBF suffix) | Yes (PBF suffix) |
| MSLレベル | N/A (Through-Hole) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| Avalanche Energy Rated | Yes | — |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| On-Resistance RDS(on) max at VGS=10V | — | 36 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | 73.3 nC |
| Power Dissipation (PD) at TC=25C | — | 160 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| 動作温度範囲 | — | -55C to +175C |
| Built-in Diode | — | Yes (intrinsic body diode) |
| Configuration | — | Single with built-in diode |