IRFB7545PBF vs IRF1310NSTRLPBF Comparison
Detailed side-by-side comparison of IRFB7545PBF by Infineon and IRF1310NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB7545PBF | IRF1310NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.84 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IRFB7545PBF | β |
| Technology | StrongIRFETβ’ (HEXFET, N-Channel) | IR MOSFET (HEXFET) |
| Polarity | N-Channel | β |
| VDS (Drain-Source Voltage) max | 60 V | β |
| VGS (Gate-Source Voltage) max | Β±20 V | β |
| RDS(on) max at VGS=10V | 5.9 mOhm | β |
| Continuous Drain Current (ID) at Tc=25C | 95 A | β |
| Pulsed Drain Current (IDM) | 380 A | [DATA_NEEDED: pulsed drain current] |
| Single-Pulse Avalanche Current (IAS) | 57 A | β |
| Power Dissipation (PD) at Tc=25C | 125 W | β |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | TO-220AB (Through-Hole) | D2PAK (TO-263AB) |
| Mounting Type | Through Hole (THT) | Surface Mount |
| Lead-Free / RoHS | Yes (Lead-Free, PBF suffix) | Yes (PBF suffix) |
| MSL Level | N/A (Through-Hole) | β |
| Gate Drive Voltage (typical) | 10 V | β |
| Avalanche Energy Rated | Yes | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25C | β | 42 A |
| On-Resistance RDS(on) max at VGS=10V | β | 36 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | β | 73.3 nC |
| Power Dissipation (PD) at TC=25C | β | 160 W |
| Power Dissipation (PD) at TA=25C | β | 3.8 W |
| Operating Temperature Range | β | -55C to +175C |
| Built-in Diode | β | Yes (intrinsic body diode) |
| Configuration | β | Single with built-in diode |