IRFR3411TRPBF vs IRFR220NTRPBF 比較
詳細な並列比較: IRFR3411TRPBF メーカー: Infineon および IRFR220NTRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFR3411TRPBF | IRFR220NTRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.55 | $0.22 |
| Polarity | N-Channel | — |
| FET Type | MOSFET (Metal Oxide) | N-Channel MOSFET |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 100 V | — |
| RDS(on) max @ VGS=10V | 44 mOhm | — |
| Continuous Drain Current (Id) @ Tc | 32 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Pd) @ Tc | 130 W | — |
| Gate Charge (Qg) | 48 nC | — |
| Operating Mode | Enhancement | — |
| Maximum Junction Temperature | 175 C | — |
| 動作温度範囲 | -55 C to +175 C | — |
| パッケージ | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 3 | — |
| Technology | HEXFET Power MOSFET (IR) | HEXFET (IR MOSFET) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| dv/dt Rating | Dynamic dv/dt rated | — |
| Lead-Free / RoHS | Yes (Lead-free, PBF suffix) | — |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance Rds(on) max at VGS=10V | — | 600 milliohm |
| Total Gate Charge (Qg) | — | 15 nC (typical per Mouser listing) |
| Maximum Power Dissition (PD) at TC=25°C | — | 43 W |
| 動作接合温度 | — | -55°C to +150°C |
| MSLレベル | — | 1 (unlimited floor life per JEDEC J-STD-020) |
| RoHS ステータス | — | Compliant (PBF suffix) |
| Avalanche Energy Rated | — | Yes (fully characterized) |
| Lead-Free | — | Yes (PBF suffix indicates Pb-free plating) |