IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon
部品番号: IRFR220NTRPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.62 | $0.62 |
| 10 | $0.54 | $5.40 |
| 100 | $0.41 | $41.00 |
| 500 | $0.33 | $165.00 |
| 1,000 | $0.28 | $280.00 |
| 3,000 | $0.22 | $660.00 |
IRFR220NTRPBF 概要
An N-channel power MOSFET is a voltage-controlled majority-carrier device that uses an insulated gate to modulate current flow between drain and source terminals. Power MOSFETs sit within the broader discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor. They are the workhorse switching element in switch-mode power supplies (SMPS), motor drivers, and DC-DC converters because they switch fast, require negligible drive current, and offer low on-resistance that minimizes conduction losses. The IR MOSFET family specifically targets medium-voltage industrial and consumer power-conversion applications where robustness, avalanche ruggedness, and ease of driving are required.
Key differentiating features of the IRFR220NTRPBF include its low gate-to-drain charge (Qgd), which reduces switching losses in high-frequency DC-DC converter circuits; a fully characterized capacitance profile (Ciss, Coss, Crss) that simplifies driver design and EMI prediction; fully characterized avalanche energy rating for unclamped inductive switching events; and a logic-level-compatible gate threshold that allows direct drive from standard 10V gate-drive signals or 5V microcontrollers with an external charge pump. The TO-252AA (DPAK) surface-mount package provides a low thermal-resistance path from the silicon die to the PCB copper pad, enabling 43W dissipation at 25°C case temperature.
From an architectural perspective, the IRFR220NTRPBF uses a planar HEXFET cell geometry optimized for 200V breakdown. The die is rated for 5A continuous drain current at TC=25°C, derating linearly with temperature to zero at 150°C junction temperature. The 600 milliohm Rds(on) at VGS=10V reflects the trade-off between conduction loss and silicon area in the 200V class; devices in this voltage class typically offer on-resistance values between 200 milliohm and 2 ohm.
Typical applications for the IRFR220NTRPBF include high-frequency DC-DC converter power stages (buck, boost, half-bridge, and full-bridge topologies), solenoid and relay drivers, low-power motor control for small DC fans and pumps, and uninterruptible power supply (UPS) auxiliary switching. Its 200V rating also makes it suitable for 120V AC-line-derived rectified rails in industrial equipment.
When designing with this device, ensure adequate PCB copper area beneath the DPAK tab to keep junction temperature below 150°C under worst-case load. Use a gate-drive resistor of 10 to 100 ohm to limit ringing and EMI, and add a gate-source pull-down resistor (10k to 100k ohm) to prevent accidental turn-on during supply transients.
This page synthesizes distributor pricing, drop-in DPAK alternatives, and practical PCB layout guidance for the IRFR220NTRPBF that is not found in the manufacturer datasheet alone.
ドロップイン代替品: IRFR220NTRPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IRFR220NTRPBF （同一形状・フットプリント） — 相違点: Technology, Package, FET Type, RoHS Status, Total Gate Charge (Qg).
クイック比較ツール — 並列比較する代替部品を選択:
IRFR220NTRLPBF
✅ ドロップイン✓ 在庫あり
$0.22 / 個
データシートを見る →IRFR220NPBF
✅ ドロップイン✓ 在庫あり
$0.74 / 個
データシートを見る →IRFR120NTRPBF
✅ ドロップイン✓ 在庫あり
$0.26 / 個
データシートを見る →IRFR2405TRPBF
✅ ドロップイン✓ 在庫あり
$0.61 / 個
データシートを見る →IRFR1205TRPBF
✅ ドロップイン✓ 在庫あり
$0.49 / 個
データシートを見る →IRFR220PBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
STD5N20LT4
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFR220NTRPBF 最大定格＆電気的特性
| FET Type | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at TC=25°C | 5 A |
| On-Resistance Rds(on) max at VGS=10V | 600 milliohm |
| Total Gate Charge (Qg) | 15 nC (typical per Mouser listing) |
| Maximum Power Dissition (PD) at TC=25°C | 43 W |
| 動作接合温度 | -55°C to +150°C |
| パッケージ | TO-252AA (DPAK), surface mount |
| 実装タイプ | Surface Mount |
| MSLレベル | 1 (unlimited floor life per JEDEC J-STD-020) |
| RoHS ステータス | Compliant (PBF suffix) |
| Avalanche Energy Rated | Yes (fully characterized) |
| Lead-Free | Yes (PBF suffix indicates Pb-free plating) |
IRFR220NTRPBF ピン構成
| ピン 1 | GATE — Gate drive input; standard threshold logic-level compatible at VGS=10V |
| ピン 2 | DRAIN — Drain terminal; also connected to the metal mounting tab for thermal dissipation |
| ピン 3 | SOURCE — Source terminal; common return for gate-drive and load current |
IRFR220NTRPBF 安全動作領域
主な用途
IRFR220NTRPBF の用途: 6 件s: High-Frequency DC-DC Converter Power Stage, Solenoid and Relay Driver, Low-Power DC Motor Control, Uninterruptible Power Supply (UPS) Auxiliary Switching, 120V AC Rectified Rail Load Switch, LED Lighting Ballast and Driver.
High-Frequency DC-DC Converter Power Stage
The IRFR220NTRPBF is well suited as the high-side or low-side switch in non-isolated buck and boost converter stages operating from 48V to 150V DC rails. Its 200V VDS rating provides ample margin above 150V telecom bus voltages, and the 600 milliohm Rds(on) at VGS=10V keeps conduction losses manageable at 2-3A continuous loads. The 15nC total gate charge enables switching frequencies of 100-200kHz with standard gate-drive ICs. Placed in a synchronous-rectifier low-side position it complements a higher-side controller MOSFET; the DPAK footprint simplifies thermal management through PCB copper area.
おすすめ
Solenoid and Relay Driver
Inductive load driving is a natural fit for the IRFR220NTRPBF due to its fully characterized avalanche energy rating and 200V VDS. Driving 24V or 48V solenoids, valves, and relays from industrial controllers, the MOSFET acts as a low-side switch with a flyback diode across the load. The 200V breakdown easily absorbs the inductive kickback (V = L*di/dt) that occurs at switch-off. The 5A continuous rating covers most industrial solenoid coils, and the DPAK package dissipates the switching and conduction losses on a small PCB area.
おすすめ
Low-Power DC Motor Control
Small DC brushed motors, fans, and pumps up to approximately 30W benefit from the IRFR220NTRPBF as a PWM-switched low-side driver. With 200V VDS the part is over-specified for 12V-24V motors, providing large transient margin for back-EMF spikes. The 5A continuous drain current covers most sub-30W motor applications, and the TO-252 (DPAK) package handles the moderate dissipation on a small heatsink or copper pour. PWM frequencies of 1-25kHz are easily supported by the 15nC gate charge.
おすすめ
Uninterruptible Power Supply (UPS) Auxiliary Switching
Auxiliary switching rails in UPS and inverter systems operate from rectified 120V or 230V AC and require 200V-class MOSFETs. The IRFR220NTRPBF serves as a low-side switch in auxiliary SMPS stages that power control circuitry, fans, and communication interfaces. Its 5A current rating covers auxiliary rails up to 50W, and the fully characterized capacitance simplifies EMI filter design. The Infineon HEXFET technology and avalanche rating provide the ruggedness needed for industrial power-conversion environments.
おすすめ
120V AC Rectified Rail Load Switch
Industrial equipment powered from 120V AC uses a full-bridge rectifier to generate approximately 170V DC, which can then be switched by a 200V-rated MOSFET. The IRFR220NTRPBF acts as a load-disconnect switch in such systems, with the 200V VDS providing 30V of headroom above the peak rectified rail. The 5A continuous rating supports auxiliary loads up to 700W, and the fully characterized avalanche energy absorbs the energy stored in any downstream inductance when the switch opens.
おすすめ
LED Lighting Ballast and Driver
Commercial LED drivers operating from universal mains (90-265V AC) use 200V or higher-rated MOSFETs in PFC and flyback converter topologies. The IRFR220NTRPBF is suited to lower-power LED driver stages up to 25W, providing the 200V breakdown needed for PFC boost converters operating at 400V peak. Its 5A rating handles the discontinuous-mode currents in such designs, and the DPAK package fits within the compact form factor required for integrated LED bulb drivers.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IRFR220NTRPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IRFR220NTRLPBF | IRFR220NPBF | IRFR120NTRPBF | IRFR2405TRPBF | IRFR220PBF | STD5N20LT4 |
|---|---|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Vishay Intertechnology | STMicroelectronics |
| Drain-to-Source Voltage (VDS) | 200 V | 200 V | 200 V | 100 V | 55 V | 200 V | 200 V |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) | Vishay MOSFET | STripFET |
| RoHS Compliant | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes |
主な差別化要因
- Fully characterized avalanche energy rating （vs STD5N20LT4)
- Infineon supply chain stability with mature HEXFET technology （vs Vishay IRFR220PBF)
- 200V breakdown voltage gives large design margin （vs IRFR2405TRPBF)
設計ノート
The DPAK (TO-252) package dissipates 43W at TC=25°C but only a fraction of that in real PCB-mount conditions. Estimated: with 1 square inch (645 mm^2) of 2oz copper pad on a standard FR-4 board, the junction-to-ambient thermal resistance is approximately 50-62 C/W, limiting continuous dissipation to about 2W at 25°C ambient (or 1W at 100°C). For continuous loads above 2A at 200V (which would exceed 2W dissipation), add a small clip-on heatsink or increase the copper area to at least 4 square inches. Always measure the actual case temperature in the prototype to validate the thermal model.
Solder the DPAK tab directly to a flooded copper pad on the top layer of the PCB, with thermal vias to a bottom-layer copper plane for heat spreading. Use at least 9 thermal vias (0.3mm drill, 1.0mm pitch) under the tab. The gate, drain, and source traces should be routed to minimize parasitic inductance in the high-current drain loop; keep the drain-source loop area below 1 cm^2 to limit switching voltage overshoot. Place a 100k ohm gate-source pull-down resistor directly at the gate pin to prevent floating-gate turn-on during supply transients.
Do not drive the gate with voltages above the absolute maximum VGS rating (typically +/-20V for HEXFET). Do not exceed the body-diode reverse-recovery rating by switching at frequencies or di/dt levels beyond the datasheet safe operating area. Do not assume the DPAK tab is electrically isolated from the drain - on most 200V HEXFET devices including the IRFR220NTRPBF, the tab is internally connected to pin 2 (drain). Finally, do not use the device in linear (active-region) operation; HEXFET MOSFETs are intended for fully-on or fully-off switching, and linear operation risks thermal runaway.
コンプライアンス情報
PBF suffix on part number indicates Pb-free plating per Infineon datasheet. RoHS and REACH compliant per Infineon product declaration. Not AEC-Q100 qualified - this part is intended for industrial and consumer applications, not automotive.
