IRFZ48NSTRLPBF vs IRF640NSTRLPBF 比較
詳細な並列比較: IRFZ48NSTRLPBF メーカー: Infineon および IRF640NSTRLPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFZ48NSTRLPBF | IRF640NSTRLPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.18 | $0.89 |
| FET Type | N-Channel Power MOSFET | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) @ Tc=25C | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Static Drain-to-Source On-Resistance (Rds(on)) | 14 mΩ at VGS = 10 V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | [DATA_NEEDED: VGS(th) typical/min] |
| Total Gate Charge (Qg) | 54 nC | 44.7 nC |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Power Dissipation (Pd) @ Tc=25C | 130 W | — |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | 3.8 W | — |
| 動作接合温度 | -55C to +175C | — |
| パッケージ | D2PAK (TO-263) Surface Mount | D2PAK (TO-263AB), surface mount, 3-pin (2+tab) |
| 実装タイプ | Surface Mount | Surface Mount (Tape and Reel) |
| Packaging | Tape & Reel (13-inch reel, TRL) | — |
| Lead Finish | Lead-free (PBF) matte tin | — |
| RoHS ステータス | Compliant | Compliant |
| Technology Family | HEXFET advanced process technology | — |
| Technology | — | HEXFET (5th generation, trench MOSFET) |
| Continuous Drain Current (ID, Tc=25C) | — | 18 A |
| Maximum Power Dissipation (PD, Tc=25C) | — | 150 W |
| On-Resistance (RDS(on)) at VGS=10V | — | 0.15 ohm |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| 動作接合温度範囲 | — | -55C to +175C |
| Lead-Free (PbF) | — | Yes |