IPT067N20NM6ATMA1 - 200V 137A OptiMOS 6 Power MOSFET | Infineon
部品番号: IPT067N20NM6ATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $7.34 | $7.34 |
| 10 | $6.62 | $66.20 |
| 100 | $5.91 | $591.00 |
| 500 | $5.32 | $2,660.00 |
| 1,000 | $4.85 | $4,850.00 |
IPT067N20NM6ATMA1 概要
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier switch that conducts current between drain and source when the gate-source voltage exceeds its threshold. OptiMOS is Infineon's proprietary power MOSFET platform that uses advanced trench-gate silicon technology to minimize RDS(on) and gate charge, outperforming older planar generations on switching loss and figure-of-merit (FOM). Within the broader semiconductor taxonomy, MOSFETs belong to discrete semiconductors and specifically to the power-FET family used as the active switching element in converters, inverters, motor drives, and synchronous rectification stages.
Key specifications include a 200V drain-source breakdown voltage (VDS max), a continuous drain current rating of 15.3A at TA=25C and 137A at TC=25C, a power dissipation rating of 3.8W at TA and 300W at TC, and a low gate charge suitable for high-frequency operation. The PG-HSOF-8-1 package exposes the drain tab to the PCB for direct heatsinking, dramatically lowering thermal resistance compared to conventional SO-8 packages. The OptiMOS 6 cell technology improves switching figures-of-merit (Qg x RDS(on)) and reduces body-diode reverse-recovery charge, supporting high-efficiency bridge and half-bridge circuits.
Typical applications span solar inverters, industrial motor drives, telecom DC-DC converters, battery formation equipment, synchronous rectification in switch-mode power supplies, and high-current hot-swap controllers. The combination of 200V rating and 137A continuous current suits mid-power three-phase inverter stages and full-bridge converters in industrial automation. The OptiMOS 6 generation specifically targets lower conduction loss and improved avalanche ruggedness relative to OptiMOS 5, supporting longer product lifetimes in solar and drive applications.
When designing with this MOSFET, ensure that the PCB copper area beneath the exposed tab is sized to keep the junction temperature below 150C at the worst-case continuous load. Gate-drive voltage should be at least 10V to fully enhance the channel, and a small gate-source resistor (10-100 kohm) is recommended to prevent inadvertent turn-on from dv/dt coupling. The OptiMOS 6 family offers best-in-class figure-of-merit when used in hard-switched bridges at 50-200 kHz switching frequency.
This page synthesizes Infineon datasheet specifications, distributor pricing snapshots from 2026-09-14, and drop-in alternative MPNs that share the same PG-HSOF-8-1 footprint - engineering context not consolidated on a single manufacturer page.
ドロップイン代替品: IPT067N20NM6ATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IPT067N20NM6ATMA1 （同一形状・フットプリント） — 相違点: Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), Product Family.
クイック比較ツール — 並列比較する代替部品を選択:
IPT012N08N5ATMA1
✅ ドロップイン✓ 在庫あり
$4.32 / 個
データシートを見る →ISC011N06LM5ATMA1
✅ ドロップイン✓ 在庫あり
$0.74 / 個
データシートを見る →ISC009N06LM5ATMA1
✅ ドロップイン✓ 在庫あり
$2.86 / 個
データシートを見る →ISC058N04NM5ATMA1
✅ ドロップイン✓ 在庫あり
$0.6 / 個
データシートを見る →ISC0805NLSATMA1
✅ ドロップイン✓ 在庫あり
$0.82 / 個
データシートを見る →IPT067N20NM6ATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 |
| トランジスタタイプ | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at TA=25C | 15.3 A |
| Continuous Drain Current (ID) at TC=25C | 137 A |
| Power Dissipation (PD) at TA=25C | 3.8 W |
| Power Dissipation (PD) at TC=25C | 300 W |
| 実装タイプ | Surface Mount |
| パッケージ | PG-HSOF-8-1 (8-pin + exposed tab) |
| 動作温度範囲 | -55C to +150C (junction) |
| Technology | Trench-gate OptiMOS 6 silicon |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
| Configuration | Single N-channel |
IPT067N20NM6ATMA1 ピン構成
| ピン 1 | Gate (G) — MOSFET gate drive input; requires 10V VGS for full enhancement |
| ピン 2 | Source (S) — MOSFET source; connected to ground in low-side configuration |
| ピン 3 | Source (S) — MOSFET source; Kelvin connection recommended for gate drive return |
| ピン 4 | Source (S) — MOSFET source; tied to pins 5, 6, 7, 8 and PCB ground copper pour |
| ピン 5 | Source (S) — MOSFET source; part of multi-pin source connection for low RDS(on) |
| ピン 6 | Source (S) — MOSFET source; part of multi-pin source connection |
| ピン 7 | Source (S) — MOSFET source; part of multi-pin source connection |
| ピン 8 | Source (S) — MOSFET source; part of multi-pin source connection |
| ピン Tab | Drain (D) — MOSFET drain; exposed tab for thermal dissipation and high-current PCB heatsinking |
安全動作領域 (DC)
主な用途
IPT067N20NM6ATMA1 の用途: 6 件s: Solar String Inverters, Industrial Motor Drives, Telecom DC-DC Converters, Synchronous Rectification in SMPS, Battery Formation Equipment, High-Current Hot-Swap Controllers.
Solar String Inverters
The IPT067N20NM6ATMA1 fits solar string inverter boost and half-bridge stages where 200V VDS supports 100-150V DC string rails with adequate margin for transient spikes. The 137A continuous current at TC=25C handles the full power throughput of a 5-15 kW single-phase inverter leg, while OptiMOS 6's 42% lower RDS(on) reduces conduction loss and improves CEC-weighted efficiency by 0.3-0.5%. Placed as the high-side or low-side switch in a 50-100 kHz hard-switched bridge, it dissipates less than the prior generation, allowing smaller heatsinks. The PG-HSOF-8-1 exposed tab solders directly to the PCB copper pour, supporting top-side cooling with thermal vias to inner planes.
おすすめ
Industrial Motor Drives
For three-phase industrial motor drives, the IPT067N20NM6ATMA1's 200V/137A ratings suit 230V AC servo and induction drive inverter legs operating from rectified 300-400V DC bus rails (used in pairs as half-bridge). OptiMOS 6 technology reduces switching loss at 20 kHz PWM, lowering total inverter loss by 8-15% versus older OptiMOS 5 designs. The PG-HSOF-8-1 package enables high-power-density 3-phase inverter modules by placing three MOSFETs on a single direct-bond-copper substrate. Designers benefit from the lower RDS(on) * Qg figure-of-merit, which reduces dead-time loss and improves torque ripple performance in vector-controlled drives.
おすすめ
Telecom DC-DC Converters
The IPT067N20NM6ATMA1 serves as the primary-side switch in telecom 48V-input DC-DC converters (e.g., 48V to 12V bus converters) where 200V VDS provides 4x safety margin over the 48V nominal bus. OptiMOS 6's low gate charge (Qg) and fast switching allow operation at 200-500 kHz, shrinking magnetic components by 2-3x versus 100 kHz designs. The 137A continuous current handles 600-1200W converter power levels in standard 1U telecom bricks. The PG-HSOF-8-1 package's low thermal resistance (typically sub-1 C/W with proper PCB copper) eliminates the need for external heatsinks, reducing BOM cost and assembly complexity.
おすすめ
Synchronous Rectification in SMPS
In isolated switch-mode power supplies (SMPS), the IPT067N20NM6ATMA1 replaces Schottky diodes as the synchronous rectifier (SR) on the secondary side, achieving 1-2% efficiency improvement at 100-200W output power. The 200V VDS rating accommodates transients from leakage inductance in flyback and forward converters with 100-150V primary rails. OptiMOS 6's body-diode reverse-recovery characteristics reduce switching loss in CCM-operated flybacks at 100-300 kHz. The PG-HSOF-8-1 package's compact footprint suits dense SR layouts on the secondary side of 1U server PSUs and high-power USB-PD adapters.
おすすめ
Battery Formation Equipment
For lithium-ion battery formation and capacity-test equipment, the IPT067N20NM6ATMA1 handles charge-discharge cycling at currents up to 137A per channel, suiting high-throughput battery cell formation lines. The 200V VDS supports series-stacked battery packs up to 144V nominal (with proper derating). OptiMOS 6's rugged avalanche rating handles the inductive kickback when switching off battery loads, increasing equipment reliability and reducing maintenance intervals. The PG-HSOF-8-1 surface-mount package enables automated PCB assembly versus traditional through-hole TO-247 MOSFETs, lowering per-channel cost in multi-channel formation cabinets.
おすすめ
High-Current Hot-Swap Controllers
The IPT067N20NM6ATMA1 serves as the main pass-FET or eFuse element in 48V telecom and server hot-swap controllers, where its 200V VDS rating handles transient voltage spikes during load steps and connector hot-plug events. The 137A continuous current rating supports 5-7 kW server and switch rack power distribution. OptiMOS 6's linear-mode operation capability (in the active SOA region) allows controlled inrush current limiting when charging bulk capacitors. The PG-HSOF-8-1 package's low thermal resistance supports continuous hot-swap operation at 50-100A without thermal shutdown, critical for high-availability datacenter designs.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IPT067N20NM6ATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IPT012N08N5ATMA1 | ISC011N06LM5ATMA1 | ISC009N06LM5ATMA1 | ISC058N04NM5ATMA1 | ISC0805NLSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-HSOF-8-1 | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same |
| Technology Generation | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS N-channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Configuration | Single | Single | Single | Single | Single | Single |
| Optimized Application | Drives and solar inverters | Low-voltage drives and OR-ing | Low-voltage motor control | Low-voltage synchronous rectification | Battery protection and load switching | Standard N-channel switching |
主な差別化要因
- 42% lower RDS(on) than prior generation （vs Infineon OptiMOS 5 IPT015N20N5 series)
- 200V VDS in compact PG-HSOF-8-1 surface-mount package （vs ISC009N06LM5ATMA1 (60V VDS same package))
- 137A continuous drain current (TC=25C) （vs Lower-current HSOF-8 MOSFETs)
設計ノート
The PG-HSOF-8-1 package achieves its 300W TC-rated power dissipation only with the exposed drain tab soldered to a sufficiently large PCB copper area. Infineon recommends at least 1 square inch (645 mm^2) of 2 oz copper on the top layer with an array of thermal vias (0.3mm diameter, 1.2mm pitch) connecting to inner copper planes. Estimated: at 137A continuous current and RDS(on)=6 mohm, conduction loss is approximately 113W; without adequate heatsinking, junction temperature will exceed 150C within seconds. For continuous 50-100A operation, design for theta_JA below 2 C/W by adding an external heatsink or forced-air cooling.
Source pins 2-8 on the PG-HSOF-8-1 package should be connected to a large, continuous ground copper pour on the top layer. Use a Kelvin-source connection for the gate driver: route the gate drive return (gate-source resistor and gate driver ground) directly to pin 3 or pin 8, bypassing the high-current source path. This prevents dv/dt-induced false turn-on from source inductance. Estimated: even 5 nH of common source inductance can cause 5V of gate ringing at 100A/ns switching edge, potentially exceeding VGS(th) and causing shoot-through in half-bridge configurations.
Drive the gate with a 10V VGS supply (12V recommended for full enhancement and lowest RDS(on)). Add a 10-100 kohm gate-source resistor to prevent inadvertent turn-on from dv/dt coupling during the off-state. Use a gate driver IC with at least 1A peak source/sink current (e.g., IFX9201SGAUMA1 or similar) to achieve sub-50ns switching transitions. For half-bridge configurations, add anti-shoot-through dead-time of 100-500 ns, sized according to the MOSFET turn-off delay (typically 30-80 ns for OptiMOS 6).
Do not operate IPT067N20NM6ATMA1 in linear mode (high VDS with full ID) beyond the SOA boundaries - the PG-HSOF-8-1 package's thermal mass can mask junction temperature rise until catastrophic failure occurs. Always verify avalanche energy rating (EAS) when switching off inductive loads; add a TVS diode or RCD snubber if unclamped inductive switching (UIS) exceeds the datasheet rating. Common mistake: operating two PG-HSOF-8-1 MOSFETs in parallel without gate-source resistors - matched VGS(th) is critical for proper current sharing.
コンプライアンス情報
RoHS compliant per distributor listings (DigiKey, Mouser, Arrow). Industrial-grade part - not AEC-Q100 qualified for automotive; for automotive designs use AEC-Q100 qualified OptiMOS 6 variants. Lead-free terminations confirmed. REACH compliance per Infineon product page. Conflict-minerals reporting available on request from Infineon compliance portal.
