ISC011N04NM7VATMA1 vs IAUC120N06S5N017ATMA1 比較
詳細な並列比較: ISC011N04NM7VATMA1 メーカー: Infineon および IAUC120N06S5N017ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 ✓ 生産中仕様比較
| パラメータ | ISC011N04NM7VATMA1 | IAUC120N06S5N017ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.41 | $1.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| FET Type | N-Channel | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | — |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | — |
| パッケージ | PG-TDSON-8 (source-down) | PG-TDSON-8-43 (TDSON-8 EP) |
| 実装タイプ | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | — |
| 動作温度範囲 | -55 °C to +175 °C (TJ) | -55°C to +175°C |
| RoHS Compliance | Compliant (per Infineon product page) | Green Product (RoHS compliant) |
| MSLレベル | MSL 1 (per JEDEC J-STD-020) | MSL1 (260°C peak reflow) |
| Series | — | OptiMOS 5 |
| Continuous Drain Current (ID, Tc=25°C) | — | 120 A |
| Pulsed Drain Current (IDM) | — | 757 A |
| RDS(on) at VGS=10V | — | 1.7 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| Total Gate Charge (Qg) at VGS=10V | — | 95.9 nC |
| Input Capacitance (Ciss) | — | 6.952 nF |
| Reverse Transfer Capacitance (Crss) | — | 84 pF |
| Output Capacitance (Coss) | — | 1.507 nF |
| Power Dissipation (PD, Tc=25°C) | — | 167 W |
| AEC-Q101 Qualification | — | Yes (Automotive Grade) |