ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
部品番号: ISZ028N03LF2SATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.85 | $8.50 |
| 100 | $0.74 | $74.00 |
| 500 | $0.64 | $320.00 |
| 1,000 | $0.55 | $550.00 |
| 3,000 | $0.49 | $1,470.00 |
ISZ028N03LF2SATMA1 概要
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the workhorse of modern switching power conversion. StrongIRFET 2 is Infineon's second-generation family of low-voltage power MOSFETs that improve upon classic StrongIRFET by lowering RDS(on) for the same silicon area, increasing current density, and reducing gate charge (Qg) to shrink switching losses. Within the broader component taxonomy, this part belongs to: MOSFET -> discrete semiconductor -> transistor -> semiconductor. StrongIRFET 2 specifically targets synchronous rectification, hot-swap ORing, and high-current DC-DC conversion where every milliohm of conduction loss translates into measurable efficiency improvement.
Key features of the ISZ028N03LF2SATMA1 include an optimized synchronous-rectifier cell design, low Qg to reduce driver losses, avalanche-rated single-pulse robustness, a logic-level-compatible gate threshold around 2.35V, and an industry-standard 8-pin TSDSON footprint with an exposed thermal pad. The PG-TSDSON-8 FL package has no leads on two sides (the FL = 'flat lead' variant) and provides a very low package resistance, keeping the total circuit-loop RDS(on) close to the silicon RDS(on). Together these properties make the part easy to drive from standard PWM controllers while keeping conduction and switching losses low.
The architecture uses Infineon's advanced trench MOSFET cell technology, paired with a copper-clip-style internal source connection that minimizes package resistance contribution. Compared to older D2PAK or DPAK packages with similar silicon area, the TSDSON-8 FL dramatically shrinks PCB footprint while improving thermal coupling to the PCB copper, allowing designs that handle >80W in the same board space previously used for <30W converters. The result is a parts list simplification: smaller magnetics, smaller heatsinks, and easier layout.
Typical applications include high-frequency synchronous rectification in 12V-to-low-voltage DC-DC converters (e.g., 12V->3.3V/5V POL), high-current hot-swap and ORing for server/ telecom boards, battery management in 12V/24V e-mobility, USB-PD and other Type-C sink power paths, and motor drive H-bridges for low-voltage brushless DC motors. The device's low RDS(on) minimizes I²R loss on the high-current side, directly improving system efficiency and thermal headroom.
When designing with this part, place the gate driver as close as possible to the gate pin to minimize ringing. Use a Kelvin-source connection if available, and ensure the PCB copper under the exposed pad is sized to handle the steady-state dissipation. Recommended gate-drive voltage is 10V for lowest RDS(on); 4.5V is acceptable for logic-level systems with reduced performance.
This page synthesizes Infineon datasheet specifications, distributor pricing as of 2026-09-14, drop-in alternatives within the StrongIRFET 2 family, and practical design notes that go beyond the bare datasheet figures.
ドロップイン代替品: ISZ028N03LF2SATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: ISZ028N03LF2SATMA1 （同一形状・フットプリント） — 相違点: Package, Technology, Operating Temperature Range, Continuous Drain Current (ID) at TA=25C, Continuous Drain Current (ID) at TC=25C.
クイック比較ツール — 並列比較する代替部品を選択:
ISC028N03LF2SATMA1
✅ ドロップイン✓ 在庫あり
$0.86 / 個
データシートを見る →ISZ033N03LF2SATMA1
✅ ドロップイン✓ 在庫あり
$0.68 / 個
データシートを見る →ISZ019N03L5SATMA1
✅ ドロップイン✓ 在庫あり
$0.48 / 個
データシートを見る →ISZ056N03LF2SATMA1
✅ ドロップイン✓ 在庫あり
$0.49 / 個
データシートを見る →BSC019N08NS5ATMA1
✅ ドロップイン✓ 在庫あり
$1.78 / 個
データシートを見る →ISC015N06NM5ATMA1
✅ ドロップイン✓ 在庫あり
$0.62 / 個
データシートを見る →ISZ028N03LF2SATMA1 最大定格＆電気的特性
| FET Type | N-Channel |
| Technology | StrongIRFET 2 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Tc | 128 A |
| Continuous Drain Current (ID) at Ta | 22 A |
| Gate Threshold Voltage (VGS(th)) | 2.35 V |
| On-Resistance (RDS(on)) max | 2.8 mΩ |
| Power Dissipation (Tc) | 83 W |
| Power Dissipation (Ta) | 3 W |
| パッケージ | PG-TSDSON-8 FL (FL = flat lead) |
| 実装タイプ | Surface Mount |
| 動作温度範囲 | -55C to +175C (junction, typical) |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) |
| RoHS ステータス | Compliant |
| MSLレベル | 1 |
| Avalanche Energy Rated | Yes (single-pulse) |
ISZ028N03LF2SATMA1 ピン構成
| ピン 1 | Source — Source connection (low-side switching node return) |
| ピン 2 | Source — Source connection |
| ピン 3 | Source — Source connection |
| ピン 4 | Gate — Gate drive input |
| ピン 5 | Drain — Drain connection (high-voltage bus) |
| ピン 6 | Drain — Drain connection |
| ピン 7 | Drain — Drain connection |
| ピン 8 | Drain — Drain connection |
| ピン EP | Exposed Pad (Drain) — Thermal pad electrically connected to drain - must be soldered to PCB copper for cooling |
安全動作領域 (DC)
主な用途
ISZ028N03LF2SATMA1 の用途: 6 件s: 12V Synchronous Rectification in DC-DC Converters, Server and Telecom Hot-Swap / ORing Switches, USB Power Delivery (PD) and Type-C Sink Paths, Brushless DC Motor Drive H-Bridges, Battery Management and Protection (12V/24V Packs), Industrial 24V Bus Power Switching.
12V Synchronous Rectification in DC-DC Converters
The ISZ028N03LF2SATMA1 is ideal as the low-side synchronous rectifier in 12V-input buck converters powering CPUs, GPUs, ASICs, and DDR memory. Its 2.8 mΩ max RDS(on) at VGS=10V keeps conduction loss below 3% at 30A load, while the low Qg enables switching frequencies up to 1 MHz without excessive driver loss. Placed between the 12V rail and the inductor with the drain connected to the switching node, it eliminates the rectifier diode drop and lifts overall converter efficiency from ~85% (diode) to ~94% (sync FET). The 30V VDS rating provides ample margin for ringing on the switching node, and the PG-TSDSON-8 FL footprint allows compact point-of-load designs.
おすすめ
Server and Telecom Hot-Swap / ORing Switches
In redundant 12V power distribution for servers, telecom base stations, and networking switches, the ISZ028N03LF2SATMA1 serves as the ORing FET preventing reverse current between paralleled supplies. Its 2.8 mΩ RDS(on) limits steady-state conduction loss and heat to a level manageable by PCB copper alone, while 128A continuous current at Tc allows sharing of high-wattage rails. The exposed thermal pad efficiently dumps heat into inner copper layers. Compared to D2PAK solutions, the TSDSON-8 FL package reduces board area by ~70%, enabling denser power-delivery designs. Add a TVS across drain-source and a gate-source resistor for production robustness.
おすすめ
USB Power Delivery (PD) and Type-C Sink Paths
The ISZ028N03LF2SATMA1 is well-suited to USB-PD sink paths handling 5V/9V/12V/15V/20V up to 5A. While its 30V rating limits it to 20V profiles (no 28V/36V extended-PD ranges), the 2.8 mΩ RDS(on) keeps the load-switch conduction loss at 100W PD loads under 1.4W - manageable without heatsinks. The PG-TSDSON-8 FL footprint fits the tight PCB area inside USB-C connectors and small dongles. For higher PD voltages (28V/36V/48V), step up to a 60V or 100V StrongIRFET 2 variant instead. Pair with a USB-PD controller for fully compliant sink design.
おすすめ
Brushless DC Motor Drive H-Bridges
In 12V/24V brushless DC (BLDC) motor drives for e-mobility, robotics, and small industrial pumps, the ISZ028N03LF2SATMA1 functions as the low-side FET in each of the three half-bridges. Its 2.8 mΩ RDS(on) minimizes I²R heating during PWM commutation, while the 128A pulse-current capability handles motor startup transients. The PG-TSDSON-8 FL package keeps the inverter PCB area compact - critical for in-motor mounting or integrated drive modules. Use a dedicated 3-phase gate driver IC for proper shoot-through protection and bootstrap drive of the high-side switches.
おすすめ
Battery Management and Protection (12V/24V Packs)
For 12V/24V battery packs in e-bikes, e-scooters, portable power stations, and small UPS systems, the ISZ028N03LF2SATMA1 serves as the low-side disconnect FET in the BMS. Its 2.8 mΩ RDS(on) adds only ~70 mV drop at 25A continuous discharge, preserving usable battery capacity. The 30V VDS rating handles 24V nominal packs with cell-voltage-imbalance transients. The PG-TSDSON-8 FL exposed pad provides excellent thermal dissipation during high-current events. For 48V packs, upgrade to a 60V or 100V StrongIRFET 2 variant.
おすすめ
Industrial 24V Bus Power Switching
In industrial PLCs, sensor hubs, and 24V-bus solid-state relays, the ISZ028N03LF2SATMA1 acts as the switching element. While its 30V VDS rating only marginally exceeds 24V nominal rails, the strong avalanche rating handles the inductive kick from solenoids and motor loads. The 2.8 mΩ RDS(on) keeps on-state dissipation low even at the multi-amp currents typical of industrial actuators. The compact PG-TSDSON-8 FL footprint enables high-density IO modules. For higher-voltage industrial buses (48V/72V), select a 60V or 100V Infineon part instead.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: ISZ028N03LF2SATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | ISC028N03LF2SATMA1 | ISZ033N03LF2SATMA1 | ISZ019N03L5SATMA1 | ISZ056N03LF2SATMA1 | BSC019N08NS5ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8 FL | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TSDSON-8 FL - same | PG-TDSON-8 - similar | PG-TDSON-8 - similar |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 30 V | 30 V | 80 V | 60 V |
| On-Resistance (RDS(on)) max | 2.8 mΩ | 2.8 mΩ | 3.3 mΩ (+18%) | 1.9 mΩ (-32%) | 5.6 mΩ (+100%) | 1.9 mΩ (-32%) | 1.5 mΩ (-46%) |
| Technology Family | StrongIRFET 2 | StrongIRFET 2 | StrongIRFET 2 | StrongIRFET 2 | StrongIRFET 2 | OptiMOS 5 | OptiMOS 5 |
主な差別化要因
- Lowest RDS(on) in PG-TSDSON-8 FL 30V StrongIRFET 2 family （vs ISZ056N03LF2SATMA1)
- Higher current density than TDSON-8 predecessors （vs BSC019N08NS5ATMA1 (80V OptiMOS 5))
- Same PCB footprint as entire 30V StrongIRFET 2 family （vs ISC015N06NM5ATMA1 (60V OptiMOS 5))
設計ノート
Estimated: at PD = I² x RDS(on) with I=30A and RDS(on)=2.8 mΩ, dissipation is ~2.5W. With a PG-TSDSON-8 FL thermal resistance of approximately 50 C/W to a 1-oz 1-square-inch copper pour (typical JEDEC 51 test board), the junction temperature rise is ~125 C above ambient. For continuous 30A operation, design at least 2 square inches of top-side copper under the exposed pad, with thermal vias to inner layers. Derate to 22A for ambient-temperature applications without forced-air cooling.
Place the gate driver within 5 mm of the gate pin to minimize parasitic inductance - gate-loop inductance >10 nH causes severe ringing and possible shoot-through. Use a 10 ohm gate resistor to dampen oscillation. The exposed pad must be soldered to a copper pour with at least 4 thermal vias (0.3 mm drill) directly under the pad for proper heat extraction. Avoid routing sensitive analog signals under the FET to prevent switching-noise coupling.
Do not exceed 30V VDS - even brief transients above this rating can permanently damage the device. Use a TVS clamp across drain-source for inductive loads. The 2.35V gate threshold means the FET can partially turn on from logic-level signals; ensure the gate is actively driven low during shutdown. Avoid using the part outside its SOA - refer to the datasheet SOA curve for the specific pulse duration at your switching frequency.
Minimize the power-loop inductance by placing input capacitors within 2 mm of the drain terminal (for high-side) or source terminal (for low-side). Use wide copper pours on both top and inner layers connected via stitching vias. For high-frequency switching (>500 kHz), consider a 4-layer PCB with a dedicated ground plane immediately below the top layer to reduce EMI and improve thermal spreading.
コンプライアンス情報
Standard industrial-grade StrongIRFET 2 MOSFET. AEC-Q100 qualification not claimed; for automotive applications select IAUZxx-prefix variants from the Site MPN list.
