ISC024N08NM7ATMA1 vs ISC028N03LF2SATMA1 比較
詳細な並列比較: ISC024N08NM7ATMA1 メーカー: Infineon および ISC028N03LF2SATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | ISC024N08NM7ATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.02 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) at Ta=25C | 24 A | — |
| Continuous Drain Current (Id) at Tc | 167 A | — |
| Power Dissipation (Pd) at Ta=25C | 3 W | — |
| Power Dissipation (Pd) at Tc | 150 W | — |
| 実装タイプ | Surface Mount | Surface Mount |
| パッケージ / ケース | PG-TDSON-8 (SSO8) | — |
| 動作温度範囲 | -55 C to +175 C | — |
| Gate Threshold Voltage (typ) | [DATA_NEEDED: gate threshold voltage] | — |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) typical value] | — |
| Total Gate Charge Qg (typ) | [DATA_NEEDED: total gate charge] | — |
| RoHS ステータス | Compliant | — |
| ハロゲンフリー | Yes | — |
| MSLレベル | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Technology | OptiMOS 7 trench MOSFET | — |
| Product Family | — | OptiMOS 5 30V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 128 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 2.35 V |
| Power Dissipation at TA | — | 3 W |
| Power Dissipation at TC | — | 83 W |
| 動作接合温度 | — | -55 C to +175 C |
| パッケージ | — | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| RoHS / Lead-Free | — | Yes (RoHS compliant) |