ISC024N08NM7ATMA1 vs ISC028N03LF2SATMA1 Comparison

Detailed side-by-side comparison of ISC024N08NM7ATMA1 by Infineon and ISC028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC024N08NM7ATMA1 ISC028N03LF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (Vdss) 80 V —
Continuous Drain Current (Id) at Ta=25C 24 A —
Continuous Drain Current (Id) at Tc 167 A —
Power Dissipation (Pd) at Ta=25C 3 W —
Power Dissipation (Pd) at Tc 150 W —
Mounting Type Surface Mount Surface Mount
Package / Case PG-TDSON-8 (SSO8) —
Operating Temperature Range -55 C to +175 C —
Gate Threshold Voltage (typ) [DATA_NEEDED: gate threshold voltage] —
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) typical value] —
Total Gate Charge Qg (typ) [DATA_NEEDED: total gate charge] —
RoHS Status Compliant —
Halogen Free Yes —
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Technology OptiMOS 7 trench MOSFET —
Product Family — OptiMOS 5 30V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 128 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.35 V
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
Operating Junction Temperature — -55 C to +175 C
Package — PG-TDSON-8-62 (5x6 mm) with exposed pad
RoHS / Lead-Free — Yes (RoHS compliant)

Datasheets & Resources

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