ISCH57N04NM7VSCATMA1 vs IQDH35N03LM5SCATMA1 比較
詳細な並列比較: ISCH57N04NM7VSCATMA1 メーカー: Infineon および IQDH35N03LM5SCATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
ISCH57N04NM7VSCATMA1 - 40V 443A OptiMOS 7 Dual-Side Cooled MOSFET | Infineon
ISCH57N04NM7VSCATMA1 ✓ 生産中仕様比較
| パラメータ | ISCH57N04NM7VSCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $2.05 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 7 (trench) | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta | 52 A | 66 A |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc value, datasheet not in verified data] | — |
| Pulsed Drain Current (IDM) at Tc | 443 A | 700 A |
| Power Dissipation (PD) at Ta | 3 W | 2.5 W |
| Power Dissipation (PD) at Tc | 214 W | 278 W |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| 動作温度範囲 | -55 C to +175 C (typical MOSFET junction range) | -55 C to +175 C |
| パッケージ | PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| 実装タイプ | Surface Mount | Surface Mount |
| Configuration | Single N-channel, source-down lead-frame | — |
| Cooling | Dual Side Cooled (top + bottom thermal interface) | — |
| RoHS ステータス | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| MSLレベル | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |