ISCH57N04NM7VSCATMA1 vs IQDH35N03LM5SCATMA1 Comparison
Detailed side-by-side comparison of ISCH57N04NM7VSCATMA1 by Infineon and IQDH35N03LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISCH57N04NM7VSCATMA1
ISCH57N04NM7VSCATMA1 - 40V 443A OptiMOS 7 Dual-Side Cooled MOSFET | Infineon
ISCH57N04NM7VSCATMA1 β ActiveInfineon
IQDH35N03LM5SCATMA1
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 β ActiveSpecification Comparison
| Parameter | ISCH57N04NM7VSCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $2.05 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 7 (trench) | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at Ta | 52 A | 66 A |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc value, datasheet not in verified data] | β |
| Pulsed Drain Current (IDM) at Tc | 443 A | 700 A |
| Power Dissipation (PD) at Ta | 3 W | 2.5 W |
| Power Dissipation (PD) at Tc | 214 W | 278 W |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Operating Temperature Range | -55 C to +175 C (typical MOSFET junction range) | -55 C to +175 C |
| Package | PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-channel, source-down lead-frame | β |
| Cooling | Dual Side Cooled (top + bottom thermal interface) | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| On-State Resistance (RDS(on)) max | β | 0.35 mOhm @ VGS=10V |
| MSL Level | β | 1 (unlimited) |
| Marking | β | IQDH35N03LM5S |