ISCH57N04NM7VSCATMA1 vs IQDH35N03LM5SCATMA1 Comparación
Comparación detallada lado a lado de ISCH57N04NM7VSCATMA1 por Infineon y IQDH35N03LM5SCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISCH57N04NM7VSCATMA1 - 40V 443A OptiMOS 7 Dual-Side Cooled MOSFET | Infineon
ISCH57N04NM7VSCATMA1 ✓ ActivoInfineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISCH57N04NM7VSCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,78 | $2,05 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 7 (trench) | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta | 52 A | 66 A |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc value, datasheet not in verified data] | — |
| Pulsed Drain Current (IDM) at Tc | 443 A | 700 A |
| Power Dissipation (PD) at Ta | 3 W | 2.5 W |
| Power Dissipation (PD) at Tc | 214 W | 278 W |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C (typical MOSFET junction range) | -55 C to +175 C |
| Encapsulado | PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Configuration | Single N-channel, source-down lead-frame | — |
| Cooling | Dual Side Cooled (top + bottom thermal interface) | — |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Nivel MSL | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |