ISZ072N06NM6ATMA1 vs IPTG025N15NM6ATMA1 比較
詳細な並列比較: ISZ072N06NM6ATMA1 メーカー: Infineon および IPTG025N15NM6ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | ISZ072N06NM6ATMA1 | IPTG025N15NM6ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.38 | $1.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 150 V |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| 消費電力（TC=25°C） | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| パッケージ | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-HSOG-8-1 (TOLG) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55C to +175C ( Tj max 175C ) | -55 C to +175 C (typical for OptiMOS 6) |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 150 V (N-channel trench) |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 | — |
| Continuous Drain Current (ID) at TA=25C | — | 26 A |
| Continuous Drain Current (ID) at TC=25C | — | 264 A (pulsed) |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 395 W |
| On-State Resistance RDS(on) typ | — | 2.5 mOhm at VGS=10 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg value] |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020) |
| Solder Joint Reliability | — | Excellent - 30% smaller footprint than D2PAK |