ISZ072N06NM6ATMA1 vs IPTG025N15NM6ATMA1 对比
详细并排对比 ISZ072N06NM6ATMA1 出自 Infineon 和 IPTG025N15NM6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISZ072N06NM6ATMA1 | IPTG025N15NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $1.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | — |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 150 V |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| 功耗（TC=25°C） | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| 封装 | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-HSOG-8-1 (TOLG) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C ( Tj max 175C ) | -55 C to +175 C (typical for OptiMOS 6) |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 6 150 V (N-channel trench) |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 | — |
| Continuous Drain Current (ID) at TA=25C | — | 26 A |
| Continuous Drain Current (ID) at TC=25C | — | 264 A (pulsed) |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 395 W |
| On-State Resistance RDS(on) typ | — | 2.5 mOhm at VGS=10 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg value] |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020) |
| Solder Joint Reliability | — | Excellent - 30% smaller footprint than D2PAK |