K3KL1L10GM-JGCT vs K3LK8L80CM-MGCT 比較
詳細な並列比較: K3KL1L10GM-JGCT メーカー: Samsung Electronics および K3LK8L80CM-MGCT メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K3KL1L10GM-JGCT | K3LK8L80CM-MGCT |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | DRAM | Memory ICs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $30.90 | $0.00 |
| メモリタイプ | LPDDR5X DRAM (SDRAM) | LPDDR5X SDRAM |
| Density | 32 Gb (4 GB) | 32 Gbit (4 GB) |
| Interface Organization | x64 | — |
| データレート | LPDDR5X-7500 (up to 7500 MT/s) | — |
| Generation | LPDDR5X (premium low-power DRAM) | — |
| Speed vs Previous Generation | Up to 1.25x faster than LPDDR5 | — |
| Power Efficiency vs Previous Generation | Approximately 25% better than LPDDR5 | — |
| パッケージ | 441-ball FBGA | FBGA-315 (315-ball) |
| 実装タイプ | Surface Mount (soldered-down BGA) | Surface Mount (BGA) |
| Application Class | AI edge devices, in-vehicle devices, flagship mobile | Mobile, PC, automotive, on-device AI |
| 電源電圧 | [DATA_NEEDED: VDD/VDDQ supply voltage] | — |
| 動作温度 | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Access Latency | [DATA_NEEDED: CAS latency / tRCD / tRP timings] | — |
| Refresh Rate | [DATA_NEEDED: refresh specification] | — |
| RoHS ステータス | unknown | Compliant (per JLCPCB listing) |
| MSLレベル | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| メモリ構成 | — | x32 |
| Max Data Rate | — | 7500 Mbps |
| Supply Voltages | — | 0.5 V, 900 mV, 1.05 V, 1.8 V (multi-rail) |
| インターフェース | — | LPDDR5X (JEDEC low-power DDR) |
| Power Efficiency | — | ~25% improvement vs LPDDR5 |
| Speed Grade Suffix | — | CM-MGCT |
| Package Family | — | FBGA -> BGA -> surface mount |
| Typical End Products | — | Smartphones, tablets, edge AI devices |
| Refresh / Standby Modes | — | Self-refresh, deep power-down (per LPDDR5X protocol) |