K3KL1L10GM-JGCT vs K3LK8L80CM-MGCT 对比
详细并排对比 K3KL1L10GM-JGCT 出自 Samsung Electronics 和 K3LK8L80CM-MGCT 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K3KL1L10GM-JGCT | K3LK8L80CM-MGCT |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $30.90 | $0.00 |
| 存储器类型 | LPDDR5X DRAM (SDRAM) | LPDDR5X SDRAM |
| Density | 32 Gb (4 GB) | 32 Gbit (4 GB) |
| Interface Organization | x64 | — |
| 数据速率 | LPDDR5X-7500 (up to 7500 MT/s) | — |
| Generation | LPDDR5X (premium low-power DRAM) | — |
| Speed vs Previous Generation | Up to 1.25x faster than LPDDR5 | — |
| Power Efficiency vs Previous Generation | Approximately 25% better than LPDDR5 | — |
| 封装 | 441-ball FBGA | FBGA-315 (315-ball) |
| 安装类型 | Surface Mount (soldered-down BGA) | Surface Mount (BGA) |
| Application Class | AI edge devices, in-vehicle devices, flagship mobile | Mobile, PC, automotive, on-device AI |
| 电源电压 | [DATA_NEEDED: VDD/VDDQ supply voltage] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -25C to +85C |
| Access Latency | [DATA_NEEDED: CAS latency / tRCD / tRP timings] | — |
| Refresh Rate | [DATA_NEEDED: refresh specification] | — |
| RoHS 状态 | unknown | Compliant (per JLCPCB listing) |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| 存储组织 | — | x32 |
| Max Data Rate | — | 7500 Mbps |
| Supply Voltages | — | 0.5 V, 900 mV, 1.05 V, 1.8 V (multi-rail) |
| 接口 | — | LPDDR5X (JEDEC low-power DDR) |
| Power Efficiency | — | ~25% improvement vs LPDDR5 |
| Speed Grade Suffix | — | CM-MGCT |
| Package Family | — | FBGA -> BGA -> surface mount |
| Typical End Products | — | Smartphones, tablets, edge AI devices |
| Refresh / Standby Modes | — | Self-refresh, deep power-down (per LPDDR5X protocol) |