K9PKGY8S7M-CCK0 vs K9ADGD8S0A 比較
詳細な並列比較: K9PKGY8S7M-CCK0 メーカー: Samsung Electronics および K9ADGD8S0A メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K9PKGY8S7M-CCK0 | K9ADGD8S0A |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Memory ICs | EEPROM |
| ライフサイクル状態 | 有効 | 製造終了 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $9.40 | $0.00 |
| Memory Capacity | 128 Gb (16 GB) | — |
| メモリタイプ | NAND Flash | — |
| Cell Architecture | 3D V-NAND, MLC (2 bits/cell) | — |
| V-NAND Layers | 24 layers | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| パッケージ | BGA | [DATA_NEEDED: package] |
| 実装タイプ | Surface Mount | — |
| インターフェース | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) | [DATA_NEEDED: interface type] |
| 電源電圧 | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: endurance] |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| RoHS ステータス | Lead free / RoHS compliant | — |
| Application Domain | Enterprise SSD (e.g., Samsung 845DC Pro) | — |
| Access Time (tR) | [DATA_NEEDED: read cycle time] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Device Type | — | 3D V-NAND flash memory bare die |
| Process Technology | — | Terabit Cell Array Transistor (TCAT) |
| Architecture | — | 3D vertical NAND (V-NAND) |
| Form Factor | — | Bare die (unpackaged) |
| Found In | — | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages |
| Known Application | — | Samsung 850 Pro 128 GB SSD |
| Memory Class | — | Non-volatile NAND flash |
| Documented By | — | TechInsights report SAR-1407-802 |
| Capacity | — | [DATA_NEEDED: die capacity] |