K9ADGD8S0A - 3D V-NAND TCAT Flash Memory Die | Samsung
部品番号: K9ADGD8S0A ✗ 生産終了| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K9ADGD8S0A 概要
V-NAND flash is a category of non-volatile memory in which memory cells are stacked vertically rather than arranged in a planar 2D layout. As a member of the NAND flash hierarchy (NAND flash -> flash memory -> non-volatile semiconductor memory -> solid-state storage), V-NAND overcomes the scaling limits of planar NAND by increasing bit density vertically. The TCAT process builds the channel vertically through stacked conductive layers, enabling high endurance and stable cell characteristics.
Key characteristics of the K9ADGD8S0A die include its 3D V-NAND architecture, TCAT fabrication process, and role as a component-level building block inside packaged V-NAND products. Because it is sold as a bare die rather than a packaged component, it is primarily of interest for structural analysis, failure analysis, reverse engineering, research, and educational purposes rather than standard PCB assembly.
Typical use cases include semiconductor process analysis, competitive teardown studies, material science research on charge-trap flash cells, and academic study of 3D NAND architectures. TechInsights and REATISS have both published structural and process analyses of this exact die.
Design consideration: this part is not a drop-in component for PCB designs; it is a die-level product with no publicly available commercial datasheet, pinout, or pricing from authorized distributors.
This page synthesizes verified teardown analysis data, related V-NAND family members, and sourcing context not found in standard distributor listings.
ドロップイン代替品: K9ADGD8S0A — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K9ADGD8S0A （同一形状・フットプリント） — 相違点: Mounting Type, NAND Technology, Package, Package Type, Product Type.
クイック比較ツール — 並列比較する代替部品を選択:
K9HQGY8S5M-CCK0
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K9LPGY8S1M-CCK0
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K9HQGY8S5M
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9PRGY8S7M
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9PRGY8S7M-CCK0
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9ADGD8S0A 最大定格＆電気的特性
| Device Type | 3D V-NAND flash memory bare die |
| Process Technology | Terabit Cell Array Transistor (TCAT) |
| Architecture | 3D vertical NAND (V-NAND) |
| Form Factor | Bare die (unpackaged) |
| Found In | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages |
| Known Application | Samsung 850 Pro 128 GB SSD |
| Memory Class | Non-volatile NAND flash |
| Manufacturer | Samsung Electronics |
| Documented By | TechInsights report SAR-1407-802 |
K9ADGD8S0A standard ピン配置ガイド
K9ADGD8S0A (standard パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: K9ADGD8S0A.
詳細は データシート をご参照ください。
主な用途
K9ADGD8S0A の用途: 6 件s: Semiconductor Structural Analysis, SSD 850 Pro Teardown and Repair, V-NAND Process Research, Consumer SSD Storage, Educational Training, Failure Analysis Reference.
Semiconductor Structural Analysis
The K9ADGD8S0A is a primary subject for die-level structural analysis of 3D V-NAND. TechInsights report SAR-1407-802 documents the die's TCAT construction inside K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages, providing layer counts, cell dimensions, and process details. Because the die embodies Samsung's first-generation vertical NAND approach, it allows analysts to benchmark early 3D NAND cell arrays against modern generations. Delayering, cross-section SEM, and TEM analysis of this die reveal charge-trap cell structure, vertical channel dimensions, and tier stacking, making it a reference specimen for competitive teardown labs studying the planar-to-3D NAND transition.
おすすめ
SSD 850 Pro Teardown and Repair
The Samsung 850 Pro 128 GB SSD uses V-NAND packages built from K9ADGD8S0A dies. Repair technicians and data-recovery labs servicing 850 Pro drives encounter the packaged K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 devices on the PCB. Understanding that these packages contain TCAT V-NAND dies helps in diagnosing flash-related failures and sourcing replacement packages. Since the bare die itself is not serviceable, board-level repair relies on replacing the parent packaged components, and awareness of the die-to-package relationship supports accurate BOM matching during SSD component substitution and rework.
おすすめ
V-NAND Process Research
Researchers studying charge-trap 3D NAND technology use the K9ADGD8S0A as a historically significant specimen because it represents Samsung's TCAT process, the first mass-produced vertical NAND implementation. Academic and industrial labs analyze the die to compare TCAT's stacked-conductive-layer approach with later gate-replacement processes. The die's presence in a shipping consumer product (the 850 Pro SSD) makes it a well-documented sample with published references such as TechInsights SAR-1407-802 and REATISS process analysis, giving researchers a verified baseline for electrical characterization, retention modeling, and endurance studies of early 3D NAND cells.
おすすめ
Consumer SSD Storage
In its commercial role, the K9ADGD8S0A die functions as the storage medium of the Samsung 850 Pro 128 GB SATA SSD, mounted within K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 V-NAND packages on the drive PCB. The TCAT V-NAND architecture delivered higher endurance than planar NAND of the era, which underpinned the 850 Pro's 10-year warranty positioning. Engineers evaluating legacy 850 Pro drives for continued deployment should note that this first-generation V-NAND is EOL, and that capacity upgrades route through newer Samsung V-NAND generations rather than this die, which is no longer produced.
おすすめ
Educational Training
The K9ADGD8S0A is valuable for teaching 3D NAND concepts because it is a real, mass-production TCAT V-NAND die with published third-party analysis. Universities and corporate training programs use die photographs and cross-sections from TechInsights and REATISS to illustrate how vertical channels traverse stacked cell tiers, how charge-trap layers replace floating gates, and how peripheral circuits are arranged around the cell array. Compared with textbook diagrams, this die grounds abstract memory hierarchy concepts (die -> package -> SSD) in a concrete industrial artifact students can reference in the public literature.
おすすめ
Failure Analysis Reference
Failure-analysis labs use the K9ADGD8S0A as a known-good reference die when diagnosing defects in first-generation Samsung V-NAND packages from 850 Pro-era products. Having a structurally characterized reference (TechInsights SAR-1407-802) enables comparison of suspect units against documented layer stacks, contact geometry, and tier construction. Techniques such as emission microscopy, OBIRCH, and FIB circuit edit performed on K9HQGY8S5M-CCK0 packages benefit from die-level knowledge of the K9ADGD8S0A, shortening time-to-defect and improving root-cause accuracy for retention failures, read-disturb errors, and program-erase degradation in legacy drives.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K9ADGD8S0A — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K9HQGY8S5M-CCK0 | K9LPGY8S1M-CCK0 | K9PRGY8S7M |
|---|---|---|---|---|
| Package | Bare die (unpackaged) | Packaged V-NAND (contains this die) | Packaged V-NAND (contains this die) | Packaged V-NAND |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Process Technology | 3D V-NAND (TCAT) | 3D V-NAND (TCAT) | 3D V-NAND (TCAT) | 3D V-NAND (later generation) |
| Generation | First-generation V-NAND | First-generation V-NAND | First-generation V-NAND | Newer generation |
| PCB Mountable | No (bare die) | Yes | Yes | Yes |
| Lifecycle Status | EOL | EOL | EOL | Active |
主な差別化要因
- First-generation mass-production 3D V-NAND （vs K9PRGY8S7M)
- Documented inside two parent packages （vs K9LPGY8S1M-CCK0)
- Trade-off: not PCB-mountable （vs K9HQGY8S5M-CCK0)
設計ノート
The K9ADGD8S0A is a bare silicon die, not a packaged component. It cannot be reflow-soldered to a PCB land pattern and has no public pinout or bond-pad map. Any design requiring this storage technology must use the packaged Samsung K9HQGY8S5M-CCK0 or K9LPGY8S1M-CCK0 devices that contain this die. Attempting to source the bare die for production is a sourcing dead end since no authorized distributor carries it.
This is a first-generation TCAT V-NAND die associated with the 2014 Samsung 850 Pro SSD and is EOL as of 2026-09-04. New designs should specify current-generation Samsung V-NAND (for example the K9PRGY8S7M family) to secure supply, endurance improvements, and firmware ecosystem support. Legacy repair work on 850 Pro drives should source the packaged K9-series devices rather than the die itself.
For analysis work on dies recovered from 850 Pro packages, remember that multiple K9ADGD8S0A dies may be stacked or multiplexed inside a single K9HQGY8S5M-CCK0 or K9LPGY8S1M-CCK0 package; package-level electrical testing therefore exercises shared control signals across dies. Die-level characterization requires decapsulation and direct probing, which is destructive. Consult TechInsights report SAR-1407-802 for the documented internal construction before planning sample preparation.
コンプライアンス情報
No compliance data is published for this bare die in the provided sources. Compliance should be assessed at the packaged parent level (K9HQGY8S5M-CCK0 / K9LPGY8S1M-CCK0).
