K9PKGY8S7M-CCK0 - 128Gb 3D V-NAND MLC Flash | Samsung
部品番号: K9PKGY8S7M-CCK0 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.8 | $118.00 |
| 100 | $10.9 | $1,090.00 |
| 500 | $10.1 | $5,050.00 |
| 1,000 | $9.4 | $9,400.00 |
K9PKGY8S7M-CCK0 概要
NAND flash is a non-volatile memory technology that retains data without power and forms the storage backbone of the memory hierarchy, sitting alongside DRAM as a key memory IC class. Planar NAND stores bits in cells laid out laterally on silicon, whereas 3D V-NAND stacks cells vertically, increasing density per wafer while reducing cell-to-cell interference. MLC (multi-level cell) V-NAND stores two bits per cell, offering a balance of density, endurance, and cost for enterprise workloads.
Key characteristics of the K9PKGY8S7M-CCK0 include its 128Gb capacity per package, MLC cell architecture for improved endurance versus TLC in enterprise write workloads, vertical-stacked V-NAND cell structure, and a BGA surface-mount footprint suited to high-density SSD PCB layouts. The CCK0 suffix identifies the speed grade and package configuration code within Samsung's naming scheme.
Technical context: Samsung's V-NAND uses Charge Trap Flash (CTF) cells connected in a vertical string via a 3D process, reducing program/erase disturbance common in planar floating-gate designs. Combined with a companion SSD controller such as Samsung's MDX (S4LN021X01), these chips deliver SATA 6 Gbps class enterprise performance.
Typical applications include enterprise SSDs, data center storage arrays, embedded storage modules, and industrial computing platforms requiring high-density non-volatile storage.
Design consideration: verify controller firmware support and ONFI/legacy toggle-mode timing compatibility before substituting alternate V-NAND generations, as block sizes and timing differ across generations.
This page synthesizes verified distributor data, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet, adding value beyond raw specification listings.
ドロップイン代替品: K9PKGY8S7M-CCK0 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K9PKGY8S7M-CCK0 （同一形状・フットプリント） — 相違点: Mounting Type, Memory Type, RoHS Status, Package, Product Type.
クイック比較ツール — 並列比較する代替部品を選択:
K9PRGY8S7M-CCK0
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9PRGY8S7M
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9PKGY8S7A
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K90KGY8S7M-CCK0
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K90KGY8S7C-CCK0
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K9HQGY8S5M
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9ADGD8S0A
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9PKGY8S7M-CCK0 最大定格＆電気的特性
| Memory Capacity | 128 Gb (16 GB) |
| メモリタイプ | NAND Flash |
| Cell Architecture | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | 24 layers |
| Manufacturer | Samsung Electronics |
| パッケージ | BGA |
| 実装タイプ | Surface Mount |
| インターフェース | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| RoHS ステータス | Lead free / RoHS compliant |
| Application Domain | Enterprise SSD (e.g., Samsung 845DC Pro) |
K9PKGY8S7M-CCK0 bga ピン配置ガイド
K9PKGY8S7M-CCK0 (bga パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: K9PKGY8S7M-CCK0.
詳細は データシート をご参照ください。
主な用途
K9PKGY8S7M-CCK0 の用途: 6 件s: Enterprise SSD Data Storage, Data Center Storage Arrays, Embedded Industrial Computing, Communications and Wireless Infrastructure, Connected Peripherals and Printers, Automotive Body Electronics and Lighting.
Enterprise SSD Data Storage
The K9PKGY8S7M-CCK0 is proven in enterprise solid-state storage, most notably as one of four V-NAND packages providing the 800 GB capacity of the Samsung 845DC Pro SSD. Its MLC (2 bits/cell) architecture on 24-layer 3D V-NAND delivers higher program/erase endurance than TLC alternatives, which matters under the sustained mixed read/write workloads typical of data center servers. The 128Gb-per-package density lets designers reach terabyte-class capacities with a compact BGA population on the SSD PCB, while the V-NAND vertical string structure reduces cell-to-cell interference and program/erase disturbance compared to planar NAND. In this application the chip connects over the 8-bit toggle-mode bus to a controller such as Samsung's MDX (S4LN021X01), which manages wear leveling, ECC, and garbage collection. The trade-off versus newer generations is lower density per package, so new designs should weigh endurance priority against board area and controller support lists.
おすすめ
Data Center Storage Arrays
In data center storage arrays, the K9PKGY8S7M-CCK0 provides non-volatile capacity behind SATA 6 Gbps interfaces, as demonstrated in the 845DC Pro enterprise platform. MLC V-NAND tolerates the program/erase cycling of virtualization and database workloads better than consumer TLC, extending drive service life under heavy write amplification. The BGA package supports dense multichip arrangements that maximize capacity per PCB area, reducing chassis count per rack unit. Integration requires a controller with validated support for this V-NAND generation's timing and block organization, plus robust ECC headroom for MLC raw bit error rates. A quantified benefit of the 3D V-NAND architecture is reduced cell disturbance, which permits faster program times and higher sustained IOPS compared to planar MLC of the same era. For new array designs, this mature-generation part is best used for maintenance spares rather than fresh qualification.
おすすめ
Embedded Industrial Computing
Industrial embedded computers and gateways use BGA NAND flash like the K9PKGY8S7M-CCK0 for local code and data storage, where the non-volatile MLC V-NAND retains firmware and logs through power cycles. The 128Gb capacity comfortably holds operating systems, application images, and buffering for machine data, and the BGA footprint withstands the vibration profiles of factory and transportation environments better than socketed media. Because Worldway lists the related K90KGY8S7M-CCK0 family for automotive body electronics, communications equipment, and wireless infrastructure, the family is qualified for demanding ambient conditions. Design considerations include extended-temperature verification against the Samsung datasheet, power-fail protection circuitry to prevent corruption during brownouts, and wear-leveling software sized for MLC endurance. Pairing with an industrial controller that supports this NAND generation's toggle-mode timing ensures reliable operation across the intended service life.
おすすめ
Communications and Wireless Infrastructure
Communications equipment and wireless infrastructure nodes require reliable local storage for configuration, firmware images, and event logs, a use case explicitly associated with the Samsung K9xGY8S7M V-NAND family in distributor listings (Worldway Electronics). The K9PKGY8S7M-CCK0's MLC endurance suits the frequent write activity of network telemetry and statistic logging, while 3D V-NAND's reduced disturbance characteristics maintain data integrity over long field deployments. Its BGA surface-mount package reflows directly onto the main line card, eliminating connectors that would otherwise fail in outdoor or cabinet environments. Designers must ensure the host CPU or network processor supports this NAND generation's asynchronous/toggle-mode interface and implement refresh-aware flash translation layers. The 128Gb density per package simplifies BOM consolidation, allowing one chip to cover both boot and data storage partitions in compact radio units and edge routers.
おすすめ
Connected Peripherals and Printers
Connected peripherals and printers store firmware, fonts, page-description assets, and usage counters in non-volatile flash, an application domain that distributor data explicitly associates with the Samsung K9xGY8S7M NAND family. The K9PKGY8S7M-CCK0's 128Gb MLC V-NAND provides ample room for high-resolution asset libraries and spool buffers in office imaging platforms, with write endurance sufficient for counter and status updates accumulated over years of duty cycles. The BGA package integrates cleanly on controller boards, resisting the thermal cycling of fuser-adjacent electronics better than removable media. Host SoCs for imaging products typically expose standard NAND controllers compatible with this generation's interface, though page and block geometry differences across generations mean firmware flash translation layers must be validated per part. For high-volume peripheral manufacturing, second-sourcing within the same Samsung family footprint simplifies supply risk management.
おすすめ
Automotive Body Electronics and Lighting
Automotive body electronics and lighting modules use NAND flash for calibration data, event recording, and over-the-air update staging, an application domain that Worldway Electronics lists for the K9xGY8S7M Samsung NAND family. The K9PKGY8S7M-CCK0's BGA package suits the shock and vibration environment of vehicle electronics, and its non-volatile MLC storage preserves data across battery disconnect events. Duty cycles in lighting modules involve infrequent but critical writes, comfortably within MLC endurance budgets. Designers must confirm the exact temperature grade suffix against the Samsung datasheet, as automotive qualification levels differ within the family, and should implement wear leveling plus redundant image slots to survive unexpected power loss during updates. The 128Gb per-package density supports multi-version firmware retention and data logging in a single chip, reducing component count on crowded body-control PCBs.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K9PKGY8S7M-CCK0 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K9PRGY8S7M-CCK0 | K9PKGY8S7A | K90KGY8S7M-CCK0 | K9HQGY8S5M |
|---|---|---|---|---|---|
| Package | BGA | BGA - same | BGA - same | BGA - same | BGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| RoHS / Lead-Free | Compliant | Compliant | Compliant | Compliant | Compliant |
主な差別化要因
- MLC endurance for enterprise write workloads （vs K9PRGY8S7M-CCK0)
- Field-proven enterprise platform reference （vs K9HQGY8S5M)
- Trade-off: lower density than current generations （vs K9HQGY8S5M)
設計ノート
Decouple the VCC and VCCQ rails with 0.1uF ceramic capacitors placed within 2 mm of each BGA ball pair, plus one bulk 10uF capacitor per package. Keep the 8-bit I/O bus traces length-matched within 50 mils and route CLE/ALE/WE/RE as a controlled group to preserve toggle-mode setup and hold timing. V-NAND BGA packages dissipate little heat at idle, but under sustained program activity, allow thermal vias under the package to spread heat into inner ground planes, keeping die temperature within the datasheet limit during sequential write bursts.
V-NAND devices use separate core and I/O voltage rails (VCC and VCCQ); confirm the exact rail values from the official Samsung datasheet before designing the power tree, as they were not stated in the retrieved web data. Implement controlled power sequencing so I/O rails do not lead the core rail by more than the datasheet maximum, and add power-fail detection that halts program/erase operations on brownout to prevent corrupt pages. Estimate per-package peak program current from the datasheet active-current figures rather than assuming SSD-drive-level averages.
Do not interchange NAND generations without controller validation: page size, block size, timing modes, and MLC/TLC cell behavior differ between the K9PKGY8S7M-CCK0 (24-layer MLC V-NAND) and newer Samsung generations like the K9HQGY8S5M. Substituting the TLC K9PRGY8S7M-CCK0 in an MLC-qualified design lowers endurance under write-heavy enterprise workloads. Also note that TechPowerUp records the 845DC Pro platform as no longer in production, so treat this mature-generation part as constrained supply and design future platforms with current-generation V-NAND.
コンプライアンス情報
Worldway Electronics lists the K90KGY8S7M family as Lead free / RoHS compliant. REACH, halogen-free, and conflict-minerals status for the exact MPN K9PKGY8S7M-CCK0 must be confirmed against Samsung's official compliance documentation.
