MRF6S21060NBR1 vs MRF6S27050HR5 比較
詳細な並列比較: MRF6S21060NBR1 メーカー: NXP Semiconductors および MRF6S27050HR5 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
NXP Semiconductors
MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP
MRF6S27050HR5 Obsolete仕様比較
| パラメータ | MRF6S21060NBR1 | MRF6S27050HR5 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | Obsolete |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $21.40 | $17.50 |
| トランジスタタイプ | LDMOS, N-Channel Enhancement-Mode | LDMOS, N-Channel, RF Power |
| Technology | RF Power Field Effect Transistor | — |
| Drain-Source Voltage (Rated) | 68 V | — |
| Operating Frequency Range | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2.12 GHz | — |
| Test Drain Voltage (VDD) | 28 V | — |
| Test Quiescent Current (IDQ) | 1600 mA | — |
| Power Gain | 15.5 dB | — |
| Output Power (Avg, Single-Carrier W-CDMA) | 14 W | — |
| Power Added Efficiency | [DATA_NEEDED: PAE %] | — |
| Operating Mode | Class AB | — |
| パッケージ | TO-272 WB-4 (ceramic flanged) | — |
| 実装タイプ | Surface Mount / Flange Mount | Chassis Mount / Screw Flange |
| RoHS ステータス | compliant | [DATA_NEEDED: RoHS compliance status] |
| Lead Free | yes | — |
| Target Application | W-CDMA base station final stage | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Status | — | Obsolete |
| Frequency | — | 2.62 GHz (operating band) |
| Test Voltage (Vds) | — | 28 V |
| Current Rating | — | [DATA_NEEDED: continuous/maximum drain current] |
| Test Current | — | 500 mA |
| Power Gain (Gps) | — | 16 dB (typical at 2.62 GHz) |
| Power Output | — | 7 W |
| Voltage - Rated (Vds max) | — | 68 V |
| パッケージ / ケース | — | NI-780H-2L |
| Supplier Device Package | — | NI-780 |
| 動作温度 | — | [DATA_NEEDED: operating temperature range] |
| MSLレベル | — | Not applicable (non-surface-mount ceramic package) |
| Primary Application | — | WCDMA / UMTS base-station PA driver and final stage |