MRF6S21060NBR1 vs MRF6S27050HR5 비교
다음의 상세 나란히 비교: MRF6S21060NBR1 제조: NXP Semiconductors 및 MRF6S27050HR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP
MRF6S27050HR5 Obsolete사양 비교
| 파라미터 | MRF6S21060NBR1 | MRF6S27050HR5 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | Obsolete |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $21.40 | $17.50 |
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode | LDMOS, N-Channel, RF Power |
| Technology | RF Power Field Effect Transistor | — |
| Drain-Source Voltage (Rated) | 68 V | — |
| Operating Frequency Range | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2.12 GHz | — |
| Test Drain Voltage (VDD) | 28 V | — |
| Test Quiescent Current (IDQ) | 1600 mA | — |
| Power Gain | 15.5 dB | — |
| Output Power (Avg, Single-Carrier W-CDMA) | 14 W | — |
| Power Added Efficiency | [DATA_NEEDED: PAE %] | — |
| Operating Mode | Class AB | — |
| 패키지 | TO-272 WB-4 (ceramic flanged) | — |
| 실장 유형 | Surface Mount / Flange Mount | Chassis Mount / Screw Flange |
| RoHS 상태 | compliant | [DATA_NEEDED: RoHS compliance status] |
| Lead Free | yes | — |
| Target Application | W-CDMA base station final stage | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Status | — | Obsolete |
| Frequency | — | 2.62 GHz (operating band) |
| Test Voltage (Vds) | — | 28 V |
| Current Rating | — | [DATA_NEEDED: continuous/maximum drain current] |
| Test Current | — | 500 mA |
| Power Gain (Gps) | — | 16 dB (typical at 2.62 GHz) |
| Power Output | — | 7 W |
| Voltage - Rated (Vds max) | — | 68 V |
| 패키지 / 케이스 | — | NI-780H-2L |
| Supplier Device Package | — | NI-780 |
| 동작 온도 | — | [DATA_NEEDED: operating temperature range] |
| MSL 레벨 | — | Not applicable (non-surface-mount ceramic package) |
| Primary Application | — | WCDMA / UMTS base-station PA driver and final stage |