MRF6S21060NBR1 vs MRF6S27050HR5 对比
详细并排对比 MRF6S21060NBR1 出自 NXP Semiconductors 和 MRF6S27050HR5 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF6S27050HR5 - 2.62 GHz RF Power LDMOS, 7W, NI-780H | NXP
MRF6S27050HR5 Obsolete规格对比
| 参数 | MRF6S21060NBR1 | MRF6S27050HR5 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $21.40 | $17.50 |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode | LDMOS, N-Channel, RF Power |
| Technology | RF Power Field Effect Transistor | — |
| Drain-Source Voltage (Rated) | 68 V | — |
| Operating Frequency Range | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2.12 GHz | — |
| Test Drain Voltage (VDD) | 28 V | — |
| Test Quiescent Current (IDQ) | 1600 mA | — |
| Power Gain | 15.5 dB | — |
| Output Power (Avg, Single-Carrier W-CDMA) | 14 W | — |
| Power Added Efficiency | [DATA_NEEDED: PAE %] | — |
| Operating Mode | Class AB | — |
| 封装 | TO-272 WB-4 (ceramic flanged) | — |
| 安装类型 | Surface Mount / Flange Mount | Chassis Mount / Screw Flange |
| RoHS 状态 | compliant | [DATA_NEEDED: RoHS compliance status] |
| Lead Free | yes | — |
| Target Application | W-CDMA base station final stage | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Status | — | Obsolete |
| Frequency | — | 2.62 GHz (operating band) |
| Test Voltage (Vds) | — | 28 V |
| Current Rating | — | [DATA_NEEDED: continuous/maximum drain current] |
| Test Current | — | 500 mA |
| Power Gain (Gps) | — | 16 dB (typical at 2.62 GHz) |
| Power Output | — | 7 W |
| Voltage - Rated (Vds max) | — | 68 V |
| 封装 / 外壳 | — | NI-780H-2L |
| Supplier Device Package | — | NI-780 |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| MSL 等级 | — | Not applicable (non-surface-mount ceramic package) |
| Primary Application | — | WCDMA / UMTS base-station PA driver and final stage |