MRF6V2300NR5 vs MRF6V2300NR1 比較
詳細な並列比較: MRF6V2300NR5 メーカー: NXP Semiconductors および MRF6V2300NR1 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | MRF6V2300NR5 | MRF6V2300NR1 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $118.80 | $107.50 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| トランジスタタイプ | LDMOS, N-Channel, Enhancement-Mode, Lateral | RF Power MOSFET (LDMOS, N-Channel, Enhancement-Mode, Lateral) |
| Technology | Lateral Double-Diffused MOS (LDMOS) | Lateral MOSFET (LDMOS-like) |
| Drain-Source Voltage (Vdss) Rated | 110 V | — |
| Typical Operating Drain Voltage | 50 V | — |
| Frequency Range | 10 MHz to 600 MHz | — |
| Test Frequency | 220 MHz | 220 MHz |
| Typical Output Power (CW) | 300 W | — |
| Typical Power Gain | 25.5 dB at 220 MHz | — |
| Drain Current (Id) | 900 mA (DC bias) | — |
| Input Matching | Unmatched (external matching required) | Unmatched |
| パッケージ | TO-270 WB-4 (ceramic, air-cavity, bolt-down) | — |
| 実装タイプ | Chassis / Heatsink Mount | Surface / flange-mount with screws |
| Operating Mode | CW large-signal / driver | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: rohs status] |
| Application | Industrial, medical, scientific RF power | — |
| Drain-Source Voltage (Vdss) | — | 110 V |
| Continuous Drain Current (Id) | — | 2.5 mA DC bias reference |
| Output Power (Pout) | — | 300 W CW |
| Power Gain | — | 25.5 dB |
| Operating Frequency Range | — | 10 MHz to 600 MHz |
| Drain Bias Voltage | — | 50 V |
| Mode of Operation | — | CW (continuous wave), Class AB |
| Package Type | — | TO-270 WB-4 (ceramic, flanged, single-ended) |
| Output Matching | — | Unmatched |
| 動作温度 | — | [DATA_NEEDED: junction/case temperature range] |