MRF6V2300NR5 vs MRF6V2300NR1 对比

详细并排对比 MRF6V2300NR5 出自 NXP Semiconductors 和 MRF6V2300NR1 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF6V2300NR5 MRF6V2300NR5 - 300W RF Power MOSFET, 10-600 MHz, 50V | NXP

MRF6V2300NR5 - 300W RF Power MOSFET, 10-600 MHz, 50V | NXP

MRF6V2300NR5 ✓ 量产中
NXP Semiconductors
MRF6V2300NR1 MRF6V2300NR1 - 300W, 50V RF Power MOSFET 10-600 MHz | NXP

MRF6V2300NR1 - 300W, 50V RF Power MOSFET 10-600 MHz | NXP

MRF6V2300NR1 ✓ 量产中

规格对比

参数 MRF6V2300NR5 MRF6V2300NR1
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $118.80 $107.50
Manufacturer NXP Semiconductors (formerly Freescale) —
晶体管类型 LDMOS, N-Channel, Enhancement-Mode, Lateral RF Power MOSFET (LDMOS, N-Channel, Enhancement-Mode, Lateral)
Technology Lateral Double-Diffused MOS (LDMOS) Lateral MOSFET (LDMOS-like)
Drain-Source Voltage (Vdss) Rated 110 V —
Typical Operating Drain Voltage 50 V —
Frequency Range 10 MHz to 600 MHz —
Test Frequency 220 MHz 220 MHz
Typical Output Power (CW) 300 W —
Typical Power Gain 25.5 dB at 220 MHz —
Drain Current (Id) 900 mA (DC bias) —
Input Matching Unmatched (external matching required) Unmatched
封装 TO-270 WB-4 (ceramic, air-cavity, bolt-down) —
安装类型 Chassis / Heatsink Mount Surface / flange-mount with screws
Operating Mode CW large-signal / driver —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: rohs status]
Application Industrial, medical, scientific RF power —
Drain-Source Voltage (Vdss) — 110 V
Continuous Drain Current (Id) — 2.5 mA DC bias reference
Output Power (Pout) — 300 W CW
Power Gain — 25.5 dB
Operating Frequency Range — 10 MHz to 600 MHz
Drain Bias Voltage — 50 V
Mode of Operation — CW (continuous wave), Class AB
Package Type — TO-270 WB-4 (ceramic, flanged, single-ended)
Output Matching — Unmatched
工作温度 — [DATA_NEEDED: junction/case temperature range]

数据手册与资源

浏览全部产品 创建 BOM 获取报价