MRF6V2300NR5 vs MRF6V2300NR1 비교
다음의 상세 나란히 비교: MRF6V2300NR5 제조: NXP Semiconductors 및 MRF6V2300NR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF6V2300NR5 | MRF6V2300NR1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $118.80 | $107.50 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| 트랜지스터 유형 | LDMOS, N-Channel, Enhancement-Mode, Lateral | RF Power MOSFET (LDMOS, N-Channel, Enhancement-Mode, Lateral) |
| Technology | Lateral Double-Diffused MOS (LDMOS) | Lateral MOSFET (LDMOS-like) |
| Drain-Source Voltage (Vdss) Rated | 110 V | — |
| Typical Operating Drain Voltage | 50 V | — |
| Frequency Range | 10 MHz to 600 MHz | — |
| Test Frequency | 220 MHz | 220 MHz |
| Typical Output Power (CW) | 300 W | — |
| Typical Power Gain | 25.5 dB at 220 MHz | — |
| Drain Current (Id) | 900 mA (DC bias) | — |
| Input Matching | Unmatched (external matching required) | Unmatched |
| 패키지 | TO-270 WB-4 (ceramic, air-cavity, bolt-down) | — |
| 실장 유형 | Chassis / Heatsink Mount | Surface / flange-mount with screws |
| Operating Mode | CW large-signal / driver | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: rohs status] |
| Application | Industrial, medical, scientific RF power | — |
| Drain-Source Voltage (Vdss) | — | 110 V |
| Continuous Drain Current (Id) | — | 2.5 mA DC bias reference |
| Output Power (Pout) | — | 300 W CW |
| Power Gain | — | 25.5 dB |
| Operating Frequency Range | — | 10 MHz to 600 MHz |
| Drain Bias Voltage | — | 50 V |
| Mode of Operation | — | CW (continuous wave), Class AB |
| Package Type | — | TO-270 WB-4 (ceramic, flanged, single-ended) |
| Output Matching | — | Unmatched |
| 동작 온도 | — | [DATA_NEEDED: junction/case temperature range] |