MRF7S19080HR3 vs MRF7S18170HR3 比較
詳細な並列比較: MRF7S19080HR3 メーカー: NXP Semiconductors および MRF7S18170HR3 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
NXP Semiconductors
MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station
MRF7S19080HR3 ✓ 生産中NXP Semiconductors
MRF7S18170HR3 - 50W 1.81GHz RF Power LDMOS | NXP Semiconductors
MRF7S18170HR3 ✓ 生産中仕様比較
| パラメータ | MRF7S19080HR3 | MRF7S18170HR3 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $36.20 | $70.00 |
| トランジスタタイプ | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | HV7 RF Power LDMOS | RF Power Field Effect Transistor |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz (1987.5 MHz) | — |
| Drain-Source Voltage (Vdss) Rated | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V | — |
| Quiescent Current (IDQ) | 750 mA | — |
| Output Power (Pout, Avg.) | 24 W (W-CDMA) | — |
| Power Gain (Gp) | 18 dB | — |
| Drain Efficiency | 32 % at 24 W Avg. | — |
| ACPR @ 5 MHz Offset | -38 dBc in 3.84 MHz channel | — |
| Device Output Signal PAR | 6.2 dB @ 0.01 % CCDF | — |
| パッケージ | NI-780H-2L (ceramic, flanged) | NI-880H-2L (ceramic, metal-sealed cofired, flange mount) |
| 実装タイプ | Surface Mount / Screw Mount | Surface Mount / Flange Mount |
| Lead Free Status | Lead Free | Yes (per datasheet) |
| RoHS ステータス | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Configuration | Single, Push-Pull | Single, Common Source |
| Drain-Source Voltage (Vds) Rated | — | 65 V |
| Test Drain Voltage (Vdd) | — | 28 V |
| Test Drain Current (Idq) | — | 1.4 A |
| Output Power (Pout) | — | 50 W |
| Power Gain | — | 17.5 dB at 1.81 GHz |
| Operating Frequency | — | 1.805 GHz to 1.88 GHz |
| Application Class | — | Class AB, Class C amplifier |
| Target Application | — | CDMA and multicarrier base station amplifiers |