MRF7S19080HR3 vs MRF7S18170HR3 对比
详细并排对比 MRF7S19080HR3 出自 NXP Semiconductors 和 MRF7S18170HR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station
MRF7S19080HR3 ✓ 量产中NXP Semiconductors
MRF7S18170HR3 - 50W 1.81GHz RF Power LDMOS | NXP Semiconductors
MRF7S18170HR3 ✓ 量产中规格对比
| 参数 | MRF7S19080HR3 | MRF7S18170HR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $36.20 | $70.00 |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | HV7 RF Power LDMOS | RF Power Field Effect Transistor |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz (1987.5 MHz) | — |
| Drain-Source Voltage (Vdss) Rated | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V | — |
| Quiescent Current (IDQ) | 750 mA | — |
| Output Power (Pout, Avg.) | 24 W (W-CDMA) | — |
| Power Gain (Gp) | 18 dB | — |
| Drain Efficiency | 32 % at 24 W Avg. | — |
| ACPR @ 5 MHz Offset | -38 dBc in 3.84 MHz channel | — |
| Device Output Signal PAR | 6.2 dB @ 0.01 % CCDF | — |
| 封装 | NI-780H-2L (ceramic, flanged) | NI-880H-2L (ceramic, metal-sealed cofired, flange mount) |
| 安装类型 | Surface Mount / Screw Mount | Surface Mount / Flange Mount |
| Lead Free Status | Lead Free | Yes (per datasheet) |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Configuration | Single, Push-Pull | Single, Common Source |
| Drain-Source Voltage (Vds) Rated | — | 65 V |
| Test Drain Voltage (Vdd) | — | 28 V |
| Test Drain Current (Idq) | — | 1.4 A |
| Output Power (Pout) | — | 50 W |
| Power Gain | — | 17.5 dB at 1.81 GHz |
| Operating Frequency | — | 1.805 GHz to 1.88 GHz |
| Application Class | — | Class AB, Class C amplifier |
| Target Application | — | CDMA and multicarrier base station amplifiers |