MRF7S19080HR3 vs MRF7S18170HR3 비교
다음의 상세 나란히 비교: MRF7S19080HR3 제조: NXP Semiconductors 및 MRF7S18170HR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station
MRF7S19080HR3 ✓ 활성NXP Semiconductors
MRF7S18170HR3 - 50W 1.81GHz RF Power LDMOS | NXP Semiconductors
MRF7S18170HR3 ✓ 활성사양 비교
| 파라미터 | MRF7S19080HR3 | MRF7S18170HR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $36.20 | $70.00 |
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | HV7 RF Power LDMOS | RF Power Field Effect Transistor |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz (1987.5 MHz) | — |
| Drain-Source Voltage (Vdss) Rated | 65 V | — |
| Operating Drain Voltage (VDD) | 28 V | — |
| Quiescent Current (IDQ) | 750 mA | — |
| Output Power (Pout, Avg.) | 24 W (W-CDMA) | — |
| Power Gain (Gp) | 18 dB | — |
| Drain Efficiency | 32 % at 24 W Avg. | — |
| ACPR @ 5 MHz Offset | -38 dBc in 3.84 MHz channel | — |
| Device Output Signal PAR | 6.2 dB @ 0.01 % CCDF | — |
| 패키지 | NI-780H-2L (ceramic, flanged) | NI-880H-2L (ceramic, metal-sealed cofired, flange mount) |
| 실장 유형 | Surface Mount / Screw Mount | Surface Mount / Flange Mount |
| Lead Free Status | Lead Free | Yes (per datasheet) |
| RoHS 상태 | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Configuration | Single, Push-Pull | Single, Common Source |
| Drain-Source Voltage (Vds) Rated | — | 65 V |
| Test Drain Voltage (Vdd) | — | 28 V |
| Test Drain Current (Idq) | — | 1.4 A |
| Output Power (Pout) | — | 50 W |
| Power Gain | — | 17.5 dB at 1.81 GHz |
| Operating Frequency | — | 1.805 GHz to 1.88 GHz |
| Application Class | — | Class AB, Class C amplifier |
| Target Application | — | CDMA and multicarrier base station amplifiers |