MRF8HP21080HR5 vs MRF8S21100HR5 比較
詳細な並列比較: MRF8HP21080HR5 メーカー: NXP Semiconductors および MRF8S21100HR5 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | MRF8HP21080HR5 | MRF8S21100HR5 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | Obsolete | Obsolete |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $88.00 | $61.75 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| トランジスタタイプ | LDMOS, N-Channel, Dual (2 elements) | N-Channel RF Power MOSFET |
| Configuration | Common Source, 2 Elements | — |
| Frequency | 2.17 GHz (2110–2170 MHz cellular band) | — |
| Test Voltage | 28 V | — |
| Test Current | 150 mA | 700 mA |
| Power Gain | 14.4 dB at 2.17 GHz | 18.3 dB at 2.17 GHz |
| Output Power (Avg.) | 16 W (W-CDMA/LTE) | — |
| Drain-Source Voltage Rating | 65 V | — |
| パッケージ / ケース | NI-780-4 (Case 465M) | — |
| 実装タイプ | Flange Mount / Chassis Mount | Surface Mount / Flange Mount |
| Number of Terminals | 4 | — |
| Technology | W-CDMA, LTE Lateral N-Channel RF Power MOSFET | LDMOS (HV8 generation) |
| Surface Mount | No (flange mount) | — |
| Peak Reflow Temperature | 260 C (not applicable - flange mount) | — |
| Part Status (DigiKey) | Discontinued at Digi-Key | — |
| Polarity | — | N-Channel |
| Operating Mode | — | Enhancement |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 65 V |
| Test Voltage (Drain) | — | 28 V |
| Frequency of Operation | — | 2.17 GHz (max, typical 2110-2170 MHz) |
| Output Power (P1dB / pulsed) | — | 100 W |
| Output Power (typical application) | — | 24 W |
| パッケージ | — | NI-780H-2L (Case 465-06), 2-pin ceramic flange |
| RoHS ステータス | — | RoHS Compliant |
| Operating Class | — | Class AB, Class C |
| Application | — | W-CDMA, LTE cellular base station |