MRF8S21200HSR6 vs MRF7S19120NR1 比較
詳細な並列比較: MRF8S21200HSR6 メーカー: NXP Semiconductors および MRF7S19120NR1 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | MRF8S21200HSR6 | MRF7S19120NR1 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $96.75 | $73.00 |
| トランジスタタイプ | LDMOS, Dual N-Channel, Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral |
| Frequency Band | 2110 MHz to 2170 MHz | — |
| Output Power (Avg, W-CDMA/LTE) | 48 W at 28 V | — |
| Power Gain | 18.1 dB | — |
| Test Voltage | 28 V | — |
| Test Current (Quiescent) | 1.4 A | — |
| Minimum Breakdown Voltage (Drain-Source) | 65 V | — |
| Maximum Junction Temperature | 225 C | — |
| Mounting Configuration | Surface Mount (NI-1230HS ceramic package) | — |
| Application Class | Class AB, Class C (cellular base station modulation) | — |
| Peak Reflow Temperature | 260 C | — |
| Number of Elements / Configuration | Dual, Common Source, 2 Elements | — |
| Lead Free Status | Lead Free | Lead Free per datasheet |
| Technology | Silicon LDMOS (lateral double-diffused MOSFET) | RF Power MOSFET (Gen7 HV8 LDMOS) |
| Target Modulation | W-CDMA, LTE, TD-LTE | W-CDMA, CDMA, multi-carrier GSM |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Output Power (Avg, W-CDMA) | — | 36 W |
| Drain-Source Voltage (Vds max) | — | 65 V (rated) |
| Test Supply Voltage (Vdd) | — | 28 V |
| Test Quiescent Current (Idq) | — | 1.2 A |
| Power Gain (typ) | — | 18 dB at 1.99 GHz |
| Operating Class | — | Class AB, Class C |
| パッケージ | — | TO-270 WB-4 (overmolded plastic, 4-lead) |
| 実装スタイル | — | Surface Mount / Flange Mount |
| ピン数 | — | 5 (per Freescale/NXP datasheet) |
| Application | — | CDMA / W-CDMA base station final-stage PA |