MRF8S21200HSR6 vs MRF7S19120NR1 비교
다음의 상세 나란히 비교: MRF8S21200HSR6 제조: NXP Semiconductors 및 MRF7S19120NR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF8S21200HSR6 | MRF7S19120NR1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $96.75 | $73.00 |
| 트랜지스터 유형 | LDMOS, Dual N-Channel, Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral |
| Frequency Band | 2110 MHz to 2170 MHz | — |
| Output Power (Avg, W-CDMA/LTE) | 48 W at 28 V | — |
| Power Gain | 18.1 dB | — |
| Test Voltage | 28 V | — |
| Test Current (Quiescent) | 1.4 A | — |
| Minimum Breakdown Voltage (Drain-Source) | 65 V | — |
| Maximum Junction Temperature | 225 C | — |
| Mounting Configuration | Surface Mount (NI-1230HS ceramic package) | — |
| Application Class | Class AB, Class C (cellular base station modulation) | — |
| Peak Reflow Temperature | 260 C | — |
| Number of Elements / Configuration | Dual, Common Source, 2 Elements | — |
| Lead Free Status | Lead Free | Lead Free per datasheet |
| Technology | Silicon LDMOS (lateral double-diffused MOSFET) | RF Power MOSFET (Gen7 HV8 LDMOS) |
| Target Modulation | W-CDMA, LTE, TD-LTE | W-CDMA, CDMA, multi-carrier GSM |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Output Power (Avg, W-CDMA) | — | 36 W |
| Drain-Source Voltage (Vds max) | — | 65 V (rated) |
| Test Supply Voltage (Vdd) | — | 28 V |
| Test Quiescent Current (Idq) | — | 1.2 A |
| Power Gain (typ) | — | 18 dB at 1.99 GHz |
| Operating Class | — | Class AB, Class C |
| 패키지 | — | TO-270 WB-4 (overmolded plastic, 4-lead) |
| 장착 스타일 | — | Surface Mount / Flange Mount |
| 핀 수 | — | 5 (per Freescale/NXP datasheet) |
| Application | — | CDMA / W-CDMA base station final-stage PA |