MRF8S9202NR3 vs MRF8S9102NR3 比較
詳細な並列比較: MRF8S9202NR3 メーカー: NXP Semiconductors および MRF8S9102NR3 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | MRF8S9202NR3 | MRF8S9102NR3 |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $64.80 | $24.10 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale) |
| Part Status | Active | — |
| トランジスタタイプ | N-Channel Lateral MOSFET | N-Channel Lateral Enhancement-Mode MOSFET |
| Configuration | Single | — |
| Frequency Range | 920 MHz to 960 MHz | — |
| Test Frequency | 920 MHz | 920 MHz |
| Output Power (W-CDMA Average) | 58 W | — |
| Power Gain (typ) | 19 dB at 920 MHz | — |
| Drain Supply Voltage (VDD) | 28 V | — |
| Quiescent Drain Current (IDQ) | 1300 mA | — |
| Drain Current (operating) | 1.3 A | — |
| Min Drain-Source Breakdown Voltage | 70 V | — |
| パッケージ / ケース | OM-780-2 (ceramic air-cavity) | — |
| 実装タイプ | Surface Mount | Chassis / flange mount with bolt-down thermal pad |
| Operating Mode | Class AB and Class C | Class AB or Class C |
| Modulation Support | Single W-CDMA, CDMA, GSM/EDGE | — |
| RoHS ステータス | Compliant | [DATA_NEEDED: rohs compliance] |
| Part Family | — | MRF8S9102N / HV8 series |
| Application | — | RF Power Amplifier, W-CDMA base station |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Drain-Source Operating Voltage (VDS) | — | 28 V (typical test condition) |
| Drain-Source Breakdown Voltage (VDSS) | — | 70 V (max) |
| Average Output Power (POUT) | — | 28 W |
| Drain Current (ID) at bias | — | 750 mA |
| Power Gain (Gp) | — | 23.1 dB |
| Modulation Format | — | Single W-CDMA (also Class AB/C capable) |
| パッケージ | — | OM-780-2 (3-pin ceramic, flange mount) |
| ピン数 | — | 3 |