MRFE6S9160HSR3 vs MRF8S9102NR3 比較

詳細な並列比較: MRFE6S9160HSR3 メーカー: NXP Semiconductors および MRF8S9102NR3 メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

NXP Semiconductors
MRFE6S9160HSR3 MRFE6S9160HSR3 - 160W RF Power LDMOS 880MHz | NXP

MRFE6S9160HSR3 - 160W RF Power LDMOS 880MHz | NXP

MRFE6S9160HSR3 ✓ 生産中
NXP Semiconductors
MRF8S9102NR3 MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP

MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP

MRF8S9102NR3 ✓ 生産中

仕様比較

パラメータ MRFE6S9160HSR3 MRF8S9102NR3
ブランド NXP Semiconductors NXP Semiconductors
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $55.20 $24.10
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale)
Part Number MRFE6S9160HSR3 —
トランジスタタイプ LDMOS, N-Channel, Enhancement-Mode, Lateral N-Channel Lateral Enhancement-Mode MOSFET
Drain-Source Voltage (VDSS) 66 V (rated) —
ドレイン-ソース間降伏電圧 [DATA_NEEDED: V(BR)DSS minimum] —
Operating Drain Voltage (VDD) 28 V (typical bias) —
Continuous Drain Current (ID) 10 uA [leakage spec context, ID max [DATA_NEEDED]] —
Quiescent Current (IDQ) 1200 mA —
Operating Frequency Range 865 MHz to 960 MHz 865 MHz to 960 MHz
Test Frequency 880 MHz 920 MHz
Output Power (Pout) Avg. 35 W (under N-CDMA drive, 9.8 dB PAR) —
Output Power Peak 160 W (peak envelope) —
Power Gain 21 dB (typical at 880 MHz) —
Drain Efficiency 31% (typical at 35 W avg.) —
ACPR at 750 kHz Offset -46.8 dBc —
パッケージ NI-780S (NI780HS) ceramic, bolted flange OM-780-2 (3-pin ceramic, flange mount)
実装タイプ Through-hole / chassis mount with flange Chassis / flange mount with bolt-down thermal pad
RoHS ステータス [DATA_NEEDED: confirm via latest distributor listing] [DATA_NEEDED: rohs compliance]
Technology HV6E (6th gen high-voltage LDMOS) —
Part Family — MRF8S9102N / HV8 series
Application — RF Power Amplifier, W-CDMA base station
Drain-Source Operating Voltage (VDS) — 28 V (typical test condition)
Drain-Source Breakdown Voltage (VDSS) — 70 V (max)
Average Output Power (POUT) — 28 W
Drain Current (ID) at bias — 750 mA
Power Gain (Gp) — 23.1 dB
Modulation Format — Single W-CDMA (also Class AB/C capable)
ピン数 — 3
Operating Mode — Class AB or Class C

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